Abstract:In this work, we studied the mechanisms and switching properties of AlGaN/GaN high-electron-mobility-transistors (HEMTs) passivated by amorphous-SiNx and monocrystal-like AlN. The effects of interface traps and polarization charges on current collapse are investigated by TCAD simulations and experimental characterizations. Surface/interface deep levels can be compensated by both shallow donor-like traps (SiNx passivation) and polarization charges (AlN passivation) at passivation/heterostructure interface, but with different levels of effectiveness under fast switching conditions. SiNx-passivation introduces shallow donor-like trap states with short time constant that favors a fast emission of trapped electrons in the access region and suppressed current collapse, but nevertheless exhibits more severe time-dependent recovery of dynamic on-resistance. For AlN passivation, interface traps are compensated by the fixed positive polarization charges and the off-state depletion region (in the 2DEG channel) is formed predominantly by electric-field effect, leading to an immediate accumulation of high channel electron concentration after switching the HEMT devices back to on-state and instant response of drain current to gate and drain bias. The field plate structure is necessary in SiNx-passivated devices for both current collapse suppression and electric field alleviation. With AlN passivation, the field plate can be solely designed for achieving more uniform electric field distribution for gate reliability concern without the concern of current collapse.

Impacts of Sin Passivation on the Degradation Modes of Algan/Gan High Electron Mobility Transistors under Reverse-Bias Stress

High-Electric-Field-Stress-Induced Degradation of Sin Passivated Algan/Gan High Electron Mobility Transistors

Electric-Stress Reliability and Current Collapse of Different Thickness Sinx Passivated Algan/Gan High Electron Mobility Transistors

Different High-Electric-Field-Stress-Induced Degradation of SiN Passivated AlGaN/GaN HEMTs

Reliability Investigation of AlGaN/GaN High Electron Mobility Transistors under Reverse-Bias Stress

Investigation on the Threshold Voltage Instability Mechanism of P-Gan Gate AlGaN/GaN HEMTs under High-Temperature Reverse Bias Stress

Study on the Electrical Degradation of AlGaN/GaN MIS-HEMTs Induced by Residual Stress of SiNx Passivation

Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Characterization of Different Trap States in AlGaN/GaN MIS-HEMTs under High Reverse Gate Stress

Degradation Mechanism of Fluorine Treated Enhancement-Mode AlGaN/GaN HEMTs under High Reverse Gate Bias

Surface Leakage Currents in Sin and Al2o3 Passivated Algan/Gan High Electron Mobility Transistors

Degradation of AlGaN/GaN Metal–insulator–semiconductor High Electron Mobility Transistors under Off-State Electrical Stress

Investigation of SiN<i><sub>x</sub></i> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Transport Mechanism of Reverse Surface Leakage Current in AlGaN/GaN High-Electron Mobility Transistor with SiN Passivation

Degradation under High-Field Stress and Gate Stress of AlGaN/GaN HEMTs

Different Gate Current Degradation Mechanisms in AlGaN/GaN High Electron Mobility Transistors

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

Effects of an Aln Passivation Layer on the Microstructure and Electronic Properties of Algan/Gan Heterostructures

Degradation Induced by Holes in Si3N4/AlGaN/GaN MIS HEMTs under Off-State Stress with UV Light.