Photoluminescence Study Of High Quality Ingan-Gan Single Heterojunctions

c j sun,j w yang,qianwang chen,b w lim,m zubair anwar,m asif khan,h temkin,d weismann,i brenner
DOI: https://doi.org/10.1063/1.117800
IF: 4
1996-01-01
Applied Physics Letters
Abstract:In this letter we report the results of room-temperature continuous wave and pulsed photoluminescence measurements on InGaN-GaN single heterojunctions. These InGaN-GaN heterojunctions were deposited over basal plane sapphire substrates using low pressure metalorganic chemical vapor deposition. We suggest the use of vertical cavity stimulated emission instead of spontaneous emission peak position as a good measure of the InGaN band edge. (C) 1996 American Institute of Physics.
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