Abstract:III-V semiconductor-based photoelectrochemical (PEC) devices show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a relevant top photoabsorber layer or a charge-selective contact in PEC for integrated and direct solar fuel production, due to its tunable lattice constant, electronic band structure, and favorable optical properties. To enhance the stability of its surface against chemical corrosion which leads to decomposition, we deposit a GaN protection and passivation layer. The n-doped GaInP(100) epitaxial layers were grown by metalorganic chemical vapor deposition on top of GaAs(100) substrate. Subsequently, thin 1-20 nm GaN films were grown on top of the oxidized GaInP surfaces by atomic layer deposition. We studied the band alignment of these multi-junction heterostructures by X-ray and ultraviolet photoelectron spectroscopy. Due to the limited emission depth of photoelectrons, we determined the band alignment by a series of separate measurements in which we either modified the GaInP(100) surface termination or the film thickness of the grown GaN on GaInP(100) buffer layers. On n-GaInP(100) surfaces prepared with the well-known phosphorus-rich (2x2)/c(4x2) reconstruction we found up-ward surface band bending (BB) of 0.34 eV, and Fermi level pinning due to the present surface states. Upon oxidation, the surface states are partially passivated resulting in a reduction of BB to 0.12 eV and a valence band offset (VBO) between GaInP and oxide bands of 2.0 eV. Between the GaInP(100) buffer layer and the GaN passivation layer, we identified a VBO of 1.8 eV. The corresponding conduction band offset of -0.2 eV is found to be rather small. Therefore, we evaluate the application of the GaN passivation layer as a promising technological step not only to reduce surface states but also to increase the stability of the surfaces of photoelectrochemical devices.

Photovoltaic effects in InGaN structures with p–n junctions

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Photoemission study and band alignment of GaN passivation layers on GaInP heterointerface

Enhancement of the Conversion Efficiency of GaN-based Photovoltaic Devices with AlGaN/InGaN Absorption Layers

Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy

High-pressure MOCVD Growth of InGaN Thick Films Toward the Photovoltaic Applications.

The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation

Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy

InSb/Ti2O3 pn heterojunctions: optoelectronic properties and NIR photovoltaic response

Two-Photon Photocurrent in InGaN/GaN Nanowire Intermediate Band Solar Cells

Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications

Group III-nitride Alloys As Photovoltaic Materials

p- to n-type conductivity transition in 1.0 eV GaInNAs solar cells controlled by the V/III ratio

Study of Photoluminescence and Absorption in Phase-Separation InGaN Films

Effect of different buffer layers on the quality of InGaN layers grown on Si

Understanding the p-Type GaN Nanocrystals on InGaN Nanowire Heterostructures

Photoluminescence and Absorption in InGaN Films with InN Segregation

Influence of Piezoelectric Fields on InGaN Based Intermediate Band Solar Cells

Fabrication and photoelectric properties of n-V2O5/p-GaAs heterojunction

Computational and experimental studies on band alignment of ZnO/InxGa2-xO3/GaN heterojunctions

Electron-Beam-Induced Current and Cathodoluminescence Characterization of Ingaas Strain-Balanced Multiquantum Well Photovoltaic Cells