Abstract:Two-dimensional layered materials (2DLMs) are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. However, the atomically thin geometry makes their electronic properties highly susceptible to the environment changes. In particular, some 2DLMs (e.g., black phosphorus (BP) and SnSe2) are unstable and could rapidly degrade over time when exposed to ambient conditions. Therefore, the development of proper passivation schemes that can preserve the intrinsic properties and enhance their lifetime represents a key challenge for these atomically thin electronic materials. Herein we introduce a simple, nondisruptive, and scalable van der Waals passivation approach by using organic thin films to simultaneously improve the performance and air stability of BP field-effect transistors (FETs). We show that dioctylbenzothienobenzothiophene (C8-BTBT) thin films can be readily deposited on BP via van der Waals epitaxy approach to protect BP against oxidation in ambient conditions over 20 d. Importantly, the noncovalent van der Waals interface between C8-BTBT and BP effectively preserves the intrinsic properties of BP, allowing us to demonstrate high-performance BP FETs with a record-high current density of 920 μA/um, hole drift velocity over 1 × 107 cm/s, and on/off ratio of 1 × 104 to ∼1 × 107 at room temperature. This approach is generally applicable to other unstable two-dimensional materials, defining a unique pathway to modulate their electronic properties and realize high-performance devices through hybrid heterojunctions.

Intrinsic Delay of Permeable Base Transistor

A Novel High-Voltage Trench Gate Insulated Gate Bipolar Transistor With Diffusion Remnant Layer

Performance Change of Few Layer Black Phosphorus Transistors in Ambient

Effect of Nano‐Porosity on High Gain Permeable Metal‐Base Transistors

Suppression of Parasitic Jfet Effect in Trench Igbts by Using A Self-Aligned P Base Process

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Fabrication and characteristics of permeable-base organic transistors based on co-evaporated pentacene:Al base

Vertical Organic Thin-Film Transistor with Anodized Permeable Base for Very Low Leakage Current

A Novel High-Voltage Light Punch-Through Carrier Stored Trench Bipolar Transistor with Buried P-Layer

Operation of A Ballistic Heterojunction Permeable Base Transistor

A High Performance Carrier Stored Trench Bipolar Transistor with a Field-Modified P-base Region

Understanding Thickness-Dependent Electrical Characteristics in Conjugated Polymer Transistors with Top-Gate Staggered Structure

Low Turn-Off Loss Lateral Insulated Gate Bipolar Transistor with Double Deep P-Regions

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Performance comparison between p-i-n tunneling transistors and conventional MOSFETs

Optimized Transport Properties in Lithium Doped Black Phosphorus Transistors

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors.

p-i-n Tunnel FETs vs. n-i-n MOSFETs: Performance Comparison from Devices to Circuits

Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) under Sub-20-nm DRAM Node—Part II: PBTI Aging and Optimization

Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene