Abstract:We report a comparative study of the electronic and optical properties of five silicon carbide (SiC) materials of different crystal structures (6H and 3C polytypes), sizes (micro- and nanocrystals), and morphologies (nanowires of SiC-SiO2 core shell structures and oxide-free nanowires). X-ray absorption near-edge structures (XANES) at both Si K- and C K-edge have been used to investigate the electronic structures of SiC. Theoretical calculations using density functional theory (DFT), the WIEN2k code are in good accord with the experiment. It is found that both 6H- and 3C-SiC have similar XANES at Si K-edge hence similar local structure at the Si site but slightly and more noticeable difference at the C K-edge, which is due to the difference in band gaps among the polytypes. The spectra of core shell nanowires are found to have both SiO2 and SiC contributions in which SiO2 is dominant. The SiO2 shell can be almost completely removed by hydrofluoric acid treatment. X-ray excited optical luminescence (XEOL) was used to measure light emission from SiC by tuning the excitation photon energy across both Si K- and C K-edge. Luminescence was observed from all SiC samples upon X-ray excitation, though at different wavelengths depending on the crystal structures and morphologies. By measuring the yield of the total luminescence (300-800 nm) and luminescence at selected wavelengths with excitation photon energy across the absorption edge, we are able to ascribe the luminescence at various wavelengths to surface states and defects, quantum confinement, and SiO2 surface/SiC-SiO2 interface in core shell nanowires. The implications of these findings are discussed.

Si 3 N 4 / SiC Interface Structure in SiC-nanocrystal-embedded Α-Si3n4 Nanorods

Synthesis and Microstructural Analysis of Si3N4 Nanorods

Structure And Energetics Of C-Si/A-Sio2 Systems: Planar Interfaces And Embedded Si Nanocrystals

Crystallization of Amorphous SiC and Superhardness Effect in CrAlN/SiC Nanomultilayered Films

SiC/Si's CRYSTALLOGRAPHIC ORIENTATION RELATIONSHIP IN SiCp/Al-Si COMPOSITES

The Microstructural Analysis of SiC Nanorods by High-Resolution Electron Microscopy.

Structural Investigation of SiC/Al4C3 and SiC/TiC Interfaces Formed in the Brazing of Sic

SiNx thickness dependent morphology and mechanical properties of CrAlN/SiNx nanomultilayers

SiC-Al interface crystallographic orientation relationship in a squeeze-cast SiCw/Al composite

Electronic Structures and Optical Properties of 6H-and 3C-Sic Microstructures and Nanostructures from X-Ray Absorption Fine Structures, X-Ray Excited Optical Luminescence, and Theoretical Studies

The microstructural analysis of SiC nanorods synthesized through carbothermal reduction

Nanocrystal formation in Si implanted thin SiO2 layers under the influence of an absorbing interface

Interface Structure Between Epitaxial NiSi2 and Si

Crystallographic Relations Between Ti3SiC2 and TiC

Phase stability and the interface structure of a nanoscale Si crystallite in Al-based alloys

Interface Morphology of Nanosized Si Embedded in Al Matrix

Gangue nanostructure and effect of the structure on synthesizing SiC

Chemical Structure Study of SiO2/4H-SiC (0001) Interface Transition Region by Angle-Dependent X-Ray Photoelectron Spectroscopy

Interface Structure of Graphene on SiC(000-1)

NiSi2/Si interface chemistry and epitaxial growth mode

Interface Evolution in the Platelet-Like SiC@C and SiC@SiO2 Monocrystal Nanocapsules