Abstract:Carbon nitride films were deposited on Co/Ni-covered Si(100) wafers at room temperature using a dc glow discharge plasma beam deposition method. The glow discharge has been carried out in a mixed gas of nitrogen and methane in different relative proportions and has maintained stable in an glow operating pressure around 30Torr. Scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectroscopy were carried out to investigate morphology, composition, structure and crystallinity of the as-deposited films. In scanning electron microscopy images, the as-deposited films consist of crystallites with an average size of about 20–30nm, and an interesting cauliflower structure is found in the center of a prepared sample. The X-ray diffraction results indicate that β- and graphitic-C3N4 crystallites and CNx or carbon nanotubes exist in the as-deposited films. The X-ray photoelectron spectroscopy results show that the [N]/[C] ratios are 0.34–0.46 and the peak shapes and intensities in the N 1s and C 1s regions are similar to those previously reported by our research group using the atom-beam assisted pulsed laser deposition method. The Raman spectra show two separated characteristic bands: a disordered D band (around 1323cm−1) that indicates the presence of C3N4 components, and a graphitic G band (around 1593cm−1). The impacts of the substrate temperatures, nitrogen/methane pressure ratios and Co/Ni layer thicknesses on the properties of the as-deposited films are discussed.

Carbon nitride films synthesized by the reactive ionized cluster beam technique

Carbon nitride films synthesized with an improved reactive ionized cluster beam system

Investigations on Structural Properties of Carbon Nitride Films Synthesized by Reactive Ionized Cluster Beam Deposition

Formation of Β-C3n4 Phase in C-N Films Deposited by Reactive Ionized Cluster Beam Method

Carbon Nitride Films Synthesized By Combined Ion-Beam And Laser-Ablation Processing

Raman Characteristics of Hard Carbon-Nitride Films Deposited by Reactive Ionized Cluster Beam Techniques

Investigation of carbon nitride films by cathodic arc evaporation

Synthesis of Carbon Nitride Films by Arc-Heated Atomic Nitrogen Beams Assisted Pulsed Laser Ablation

Carbon Nitride Films Synthesized By Nh3-Ion-Beam-Assisted Deposition

Structure and tribological properties of carbon nitride films obtained by the reactive ionized cluster beam method

Electronic and Mechanical-Properties of Carbon Nitride Films Prepared by Laser-Ablation Graphite under Nitrogen Ion-Beam Bombardment

Structural And Tribological Characteristics Of Carbon Nitride Films Deposited By The Reactive Ionized-Cluster Beam Technique

Optical & Electronic Properties of Carbon Nitride Thin Films

Formation of CNx thin films by reactive pulsed laser deposition assisted by electron cyclotron resonance microwave discharge

Ion-beam-assisted Deposition of CNx Films

Synthesis of Nanocrystalline Carbon Nitride Films by Glow Discharge Plasma Beam Deposition

Structures and bonding properties of carbon nitride films prepared by radio frequency magnetron sputtering

Phases and Physical Properties of Carbon Nitride Thin Films Prepared by Pulsed Laser Deposition

Raman spectral study on the carbon nitride film synthesized on a nitridated diamond surface by nitrogen-arc-discharge-assisted laser ablation deposition

Ion beam synthesis of C-N crystalline film and its analysis

Characterization and modification of carbon nitride films deposited by laser ablation under low energy ion‐beam bombardment