Abstract:During plasma spraying, SiC particles undergo sublimation, accompanied by the sublimation and decomposition of Si and C atoms in the crystal lattice. Ultimately, the deposited SiC either spreads splash or breaks apart on the surface of the carbon‐carbon composite matrix. It is widely known that silicon carbide (SiC) is challenging to thermal spray. However, the nature of deposition and the underlying mechanisms are still not clearly understood. In the current work, the process of atmospheric plasma‐sprayed SiC was investigated in detail. SiC exhibits sublimation severely under the plasma spraying (PS). More than 65 mol.% SiC particles lost by sublimation during PS estimated by calculation. Due to the nonuniformity of temperature in plasma flame, a small amount of SiC particles was retained. Moreover, a small amount of Si and SiO2 was experimentally observed after deposition process from the single‐splat characterization. According to the first‐principles calculations, the detachment energy of C atom from the lattice (0.591 eV) is lower than that of Si atom (1.257 eV). The adsorption energies of an O atom on the Si‐ and C‐terminated surfaces are −9.549 and −7.631 eV, respectively. Therefore, C is more likely to form gaseous products after decomposition, and Si is more likely to be retained to form Si and SiO2. Mullite was found on the grain boundaries of molten Si, which was attributed to the rapid diffusion of the Al2O3 substrate along the grain boundaries of Si, promoting the spreading of molten splats. It is difficult to stack particles through self‐diffusion among SiC particles to form coatings. The discovery on thermal deposition mechanism of SiC in PS is helpful to promote the practical application of SiC coatings on preparation optimization and interfacial bonding improvement.

XPS Analysis of SiC Films Prepared by Radio Frequency Plasma Sputtering

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Properties of amorphous SiO2 films prepared by reactive RF magnetron sputtering method

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

XPS Analysis of Silicon Oxycarbide Formed on the Surface of Rf-Sputter Deposited SiC Thin Films

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Structural and mechanical properties of amorphous Si–C-based thin films deposited by pulsed magnetron sputtering under different sputtering powers

Influence of radio frequency magnetron sputtering parameters on the structure and performance of SiC films

Preparation And Characterization Of Silicon Carbide Thin Films Synthesized By Rf-Reactive Sputtering

Measurement and Analysis on the Mechanical Properties of Silicon Carbide Film

Microstructure, mechanical and high-temperature tribological properties of amorphous SiC films by pulsed magnetron sputtering

ELECTRICAL PROPERTIES OF WSix/Si(111)FILMS BY MULTILAYER SPUTTERING

Influence of Sputtering Process on the Deposition and Optical Properties of Sicn Films

The Power Source Effect on SiOx Coating Deposition by Plasma Enhanced Chemical Vapor Deposition

STRUCTURAL ANALYSIS OF SiCN FILM PREPARED BY REACTIVE SPUTTERING

Deposition behavior and mechanism of thermal sprayed SiC

SiCx:H and SiCxNy:H Amorphous Films Prepared from Hexamethyldisilane Vapors

Investigation of PECVD SiC nano film

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Structural and optical properties of α-Si1-xCx:H thin films prepared by RF-PECVD