ELECTRICAL PROPERTIES OF WSix/Si(111)FILMS BY MULTILAYER SPUTTERING

WANG XIAO-PING,ZHAO TE-XIU,LIU HONG-TU,SHI YI-SHENG,WENG HUI-MIN,GUO XUE-ZHE
DOI: https://doi.org/10.7498/aps.43.823
IF: 0.906
1994-01-01
Acta Physica Sinica
Abstract:Tungsten silicide films have been sputtered onto silicon substrate and annealed at temperature ranging from 400 to 1000℃ in vacuum. The structure and defect of each film is detected by X-ray diffraction (XRD) and positron annihilation technology (PAT), respectively. The sheet resistance has been measured and the result in-dicates that the sheet resistance of films decrease steeply as a result of annealing in the range of 600-700℃. This phenomenon corresponds to the crystallization of W5Si3 tetragonal phase in films which has been certified by XRD. Electrical properties of films are sensitive to structure and defects in films and electrical measurement can be used as a good probe for the study on the characteristics of films.
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