Abstract:Electron effective mass is a fundamental material parameter defining the free charge carrier transport properties, but it is very challenging to be experimentally determined at high temperatures relevant to device operation. In this work, we obtain the electron effective mass parameters in a Si-doped GaN bulk substrate and epitaxial layers from terahertz (THz) and mid-infrared (MIR) optical Hall effect (OHE) measurements in the temperature range of 38–340 K. The OHE data are analyzed using the well-accepted Drude model to account for the free charge carrier contributions. A strong temperature dependence of the electron effective mass parameter in both bulk and epitaxial GaN with values ranging from (0.18 ± 0.02) m0 to (0.34 ± 0.01) m0 at a low temperature (38 K) and room temperature, respectively, is obtained from the THz OHE analysis. The observed effective mass enhancement with temperature is evaluated and discussed in view of conduction band nonparabolicity, polaron effect, strain, and deviations from the classical Drude behavior. On the other hand, the electron effective mass parameter determined by MIR OHE is found to be temperature independent with a value of (0.200 ± 0.002) m0. A possible explanation for the different findings from THz OHE and MIR OHE is proposed.

Effective Mass of a Two-Dimensional √3 × √3 Ga Single Atomic Layer on Si(111)

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Electron effective mass in Sn-doped monoclinic single crystal β-gallium oxide determined by mid-infrared optical Hall effect

Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect

Formation of the Schottky barrier at (3 × 1)NaSi(111) surface

Effective mass anomalies in strained Si thin films and crystals

The electron effective mass at the bottom of the GaNAs conduction band

Self-energy Effects on the Surface-State Energies of H-Si(111)1 X 1.

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

Electronic-Structure And Its Dependence On Local Order For H/Si(111)-(1x1) Surfaces

First-principles Study of Geometric and Electronic Structures of Si(111)-√7 × √3-in Surface Reconstruction

Effective Mass of the Two-Dimensional Electron Gas and Band Nonparabolicity in AlxGa1−xN∕GaN Heterostructures

Surface and Step Conductivities on Si(111) Surfaces

Structure and energetics of Si(111)-(5x2)-Au

Growing Extremely Thin Bulklike Metal Film on a Semiconductor Surface: Monolayer Al(111) on Si(111)

Interaction Between Adatom-Induced Localized States and A Quasi-Two-Dimensional Electron Gas

La induced Si 3 trimer monolayer on Si(111) surface: an ab initio study

MEASUREMENT OF THE BAND OFFSET IN GexSi1-x/Si SINGLE QUANTUM WELL BY USING SINGLE FREQUENCY ADMITTANCE SPECTROSCOPY

Electronic Structures of an Extra Si Atom Diffusing in the Si(1 1 1)(7 × 7) Surface

Electronic Structure Of Identical Metal Cluster Arrays On Si(111)-7x7 Surfaces