Abstract:Using Vary-temperature Scanning Tunnelling Microscopy (VT-STM), the geometric and electronic structures of technological important Sr/Si(100)-2×3 surface were investigated. Two important findings explained in this research. First, a phenomenon similar to quantum corral observed in the empty state STM image that near the bottom of the conduction band. This is aroused from the surface vacancies and phase boundary in the Sr/Si(100)-2×3 surface. And a new Sr/Si(100)-2×6 reconstructed structure coexist with Sr/Si(100)-2×3 surface has been prepared by accurately controlling the annealing temperature, both surface’s geometric structures can be described by dimer vacancy model. Second, tip-induced band bending phenomenon was observed in the Sr/Si(100)-2×3 surface at substrate temperature range from 76K to 300K. Experimental LDOS results from n and p-type silicon substrate confirms 0.3eV up the motion of the valence band minimum compare with bare Si(100)-2×1 surface. Buckled and unbuckled silicon dimer coexisting in the Sr/Si(100)-2×3 reconstructed surface contribute to the tip-induced band bending and energy band gap widen phenomenon. Which confirms that Sr atoms transfer electrons to the nearby silicon dimers, make the first layer silicon dimers kept at unbuckled state.

Surface and Step Conductivities on Si(111) Surfaces

Electrical Resistance of a Monatomic Step on a Crystal Surface

Electron transport in stepped Bi2Se3 thin films

Formation of the Schottky barrier at (3 × 1)NaSi(111) surface

Large surface-state conductivity in ultrathin Bi films

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Surface States On A Topologically Nontrivial Semimetal: The Case Of Sb(110)

First-principles Study of Geometric and Electronic Structures of Si(111)-√7 × √3-in Surface Reconstruction

Atomic Structure Of The Si(112) 7x1-In Surface

Probing Negative Differential Resistance on Si(111)-3×3-Ag Surface with Scanning Tunneling Microscopy

Study of structural and electrical properties of the reconstructed Si(111) surface after lithium adsorption

Tip-induced Band Bending on Sr/Si(100)-2×3 Reconstructed Surface

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Scanning tunneling microscopy measurements of the local work function around steps on the Au/Cu(111) surface

Statistical mechanical calculation of anisotropic step stiffness of a two-dimensional hexagonal lattice-gas model with next-nearest-neighbour interactions: application to Si(111) surface

Electronic Structures of an Extra Si Atom Diffusing in the Si(1 1 1)(7 × 7) Surface

Si(111)-$\sqrt{21}\times\sqrt{21}$-(Ag+Cs) Surface Studied by Scanning Tunneling Microscopy and Angle-Resolved Photoemission Spectroscopy

Steps on the Au/Cu(111) Surface Studied by Local Work Function Measurement with STM

Resolving The One-Dimensional Singularity Edge States Of Bi(111) Thin Films

ROLES OF STM TIP AND EXTERNAL ELECTRIC FIELD IN THE SINGLE ATOM MANIPULATION ON Si(111) 7×7 SURFACE

Surface structure of 3C‐SiC(111) grown on Si(111) surface by C 60 precursor