Electrical Resistance of a Monatomic Step on a Crystal Surface

I Matsuda,M Ueno,T Hirahara,R Hobara,H Morikawa,CH Liu,S Hasegawa
DOI: https://doi.org/10.1103/physrevlett.93.236801
IF: 8.6
2004-01-01
Physical Review Letters
Abstract:We have succeeded in measuring the resistance across a single atomic step through a monatomic-layer metal on a crystal surface, Si(111)(sqrt[3]xsqrt[3])-Ag, using three independent methods, which yielded consistent values of the resistance. Two of the methods were direct measurements with monolithic microscopic four-point probes and four-tip scanning tunneling microscope probes. The third method was the analysis of electron standing waves near step edges, combined with the Landauer formula for 2D conductors. The conductivity across a monatomic step was determined to be about 5 x 10(3) Omega(-1) m(-1). Electron transport across an atomic step is modeled as a tunneling process through an energy-barrier height approximately equal to the work function.
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