Direct Measurement of the Hall Effect in a Free-Electron-like Surface State

Toru Hirahara,Iwao Matsuda,Canhua Liu,Rei Hobara,Shinya Yoshimoto,Shuji Hasegawa
DOI: https://doi.org/10.1103/physrevb.73.235332
IF: 3.7
2006-01-01
Physical Review B
Abstract:We have succeeded in directly measuring the Hall effect in a single-atomic layer on a Si (111) crystal surface. Our four-point-probe transport measurements under magnetic field showed that the behavior of majority carriers in the surface state changed from electronlike to holelike during the structural conversion from the root 3 x root 3-Ag to root 21 x root 21-(Ag, Au) surface superstructure. This is due to a change in the Fermi surface caused by band folding. The results are discussed quantitatively and shown to be consistent with the electronic structure obtained by photoemission spectroscopy.
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