Abstract:Vertical gate‐all‐around nanowire n‐FETs based on GeSn‐alloys with Sn‐contents of 8% and 11% are presented. A great improvement in Ion, gm, and SS is found with increased Sn‐content. A fivefold increase in on‐current is observed for 11%‐GeSn compared to Ge, underlining the potential of GeSn for nanoelectronics applications. As transistors continue to shrink, the need to replace silicon with materials of higher carrier mobilities becomes imperative. Group‐IV semiconductors, and particularly GeSn alloys, stand out for their high electron and hole mobilities, making them attractive for next‐generation electronics. While Ge p‐channel devices already possess a high hole mobility, here the focus is on enhancing n‐channel transistor performance by utilizing the superior electron mobility of GeSn as channel material. Vertical gate‐all‐around nanowire (GAA NW) transistors are fabricated using epitaxial GeSn heterostructures that leverage the material growth, in situ doping, and band engineering across source/channel/drain regions. It is demonstrated that increasing Sn content in GeSn alloys constantly improves the device performances, reaching a fivefold on‐current improvement over standard Ge devices for 11 at.% Sn content. The present results underline the real potential of the GeSn alloys to bring performance and energy efficiency to future nanoelectronics applications.

Performance improvement in novel germanium–tin/germanium heterojunction-enhanced p-channel tunneling field-effect transistor

Design of Gesn-Based Heterojunction-Enhanced N-Channel Tunneling Fet with Improved Subthreshold Swing and On-State Current

Germanium-source L-shaped TFET with dual in-line tunneling junction

Enhanced Performance of Gesn Source-Pocket Tunnel Field-Effect Transistors for Low-Power Applications

Relaxed Germanium-Tin P-Channel Tunneling Field-Effect Transistors Fabricated on Si: Impacts of Sn Composition and Uniaxial Tensile Strain

Simulation of the Germanium-Tin Tunneling Field-Effect Transistors with A Ge Cap Layer: Improved Subthreshold Swing and I-On/I-Off Ratio

Investigation On Direct-Gap Gesn Alloys For High-Performance Tunneling Field-Effect Transistor Applications

Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Non-Silicon Microelectronics: Germanium and Germanium-Tin Field-Effect Transistors

Simulation of GeSn/Ge tunneling field-effect transistors for complementary logic applications

Enhancing Device Performance with High Electron Mobility GeSn Materials

Material Characterization And Device Simulation Of Gesn Alloys For Field-Effect Transistors Applications

Investigation of Performance Enhancement in Inas/Ingaas Heterojunction-Enhanced N-Channel Tunneling Field-Effect Transistor

Inn/Ingan Complementary Heterojunction-Enhanced Tunneling Field-Effect Transistor with Enhanced Subthreshold Swing and Tunneling Current

GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) with Improved Subthreshold Swing

Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Germanium-Tin P-channel tunneling field-effect transistors: Impacts of biaxial tensile strain and surface orientation

Study on the Ge1−xSnx/HfO2 Interface and Its Impacts on Ge1−xSnx Tunneling Transistor

Performance Enhancement in Uniaxially Strained Germanium–Tin FinTFET: Fin Direction Dependence

High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing