GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) with Improved Subthreshold Swing

Genquan Han,Yibo Wang,Yan Liu,Chunfu Zhang

DOI: https://doi.org/10.1109/LED.2016.2558823

IF: 4.8157

2016-01-01

IEEE Electron Device Letters

Abstract:Ultrathin GeSn channels were epitaxially grown on Si(111) and (001) substrates using solid source molecular beam epitaxy. Well-behaved GeSn quantum well (QW) pTFETs and pMOSFETs were fabricated on Si. GeSn QW pMOSFETs on Si(111) demonstrate a high effective hole mobility of 505 cm2/Vs, indicating the high crystallinity of the GeSn material. GeSn QW pTFETs on Si(111) outperform the devices on Si(001) on subthreshold swing (SS) and on-state current ION. (111)-oriented GeSn pTFET with a 4 nm thick channel achieves a steep SS of about 60 mV/decade and a high on-state/off-state current ratio of 107, which are superior to those of the other reported non-Si pTFETs with small bandgap.