Abstract:Synthesis of device-quality GeSn materials with higher Sn compositions is hindered by various factors, such as Sn segregation, clustering, and short-range ordering effects. In the present work, the impact of the clustering of Sn atoms in a GeSn semiconductor alloy was studied by density functional theory using SG15 pseudopotentials in a Synopsys QuantumATK tool, where the thermodynamic stability, effective band structure, indirect and direct bandgaps, and density of states (DOS) were computed to highlight the difference between a cluster-free random GeSn alloy and a GeSn alloy with Sn–Sn clusters. A 54-atom bulk Ge1–xSnx (x = 3.71%–27.77%) supercell was constructed with cluster-free and a first nearest neighbor Sn–Sn clustered GeSn alloy at each composition for this work. Computation using the generalized gradient approximation exchange-correlation functional showed that the thermodynamic stability of GeSn was reduced due to the clustering of Sn, which increased the formation energy of the GeSn alloys by increasing the Hartree potential energy and exchange-correlation energy. Moreover, with the effective band structure of the GeSn material at a Sn composition of ∼22%, both direct (Eg,Γ) and indirect (Eg,L) bandgaps decreased by a large margin of 40.76 and 120.17 meV, respectively, due to Sn–Sn clustering. On the other hand, Eg,Γ and Eg,L decrease is limited to 0.5 and 12.8 meV, respectively, for Sn composition of ∼5.6%. Similar impacts were observed on DOS, in an independent computation without deducing from the electronic band structure, where the width of the forbidden band reduces due to the clustering of Sn atoms in GeSn. Moreover, using the energy bandgaps of GeSn computed with the assumption of it being a random alloy having well-dispersed Sn atoms needs revision by incorporating clustering to align with the experimentally determined bandgap. This necessitates incorporating the effect of Sn atoms clustered together at varying distributions based on experimental characterization techniques such as atom probe tomography or extended x-ray absorption fine structure to substantiate the energy bandgap of the GeSn alloy at a particular composition with precision. Hence, considering the effect of Sn clusters during material characterization, beginning with the accurate energy bandgap characterization of GeSn would help in mitigating the effect of process variations on the performance characteristics of GeSn-based group IV electronic and photonic devices such as varying leakage currents in transistors and photodiodes as well as the deviation from the targeted wavelength of operation in lasers and photodetectors.

Investigation On Direct-Gap Gesn Alloys For High-Performance Tunneling Field-Effect Transistor Applications

Material Characterization And Device Simulation Of Gesn Alloys For Field-Effect Transistors Applications

Enhanced Performance of Gesn Source-Pocket Tunnel Field-Effect Transistors for Low-Power Applications

Role of tin clustering in band structure and thermodynamic stability of GeSn by atomistic modeling

Enhancing Device Performance with High Electron Mobility GeSn Materials

Simulation of the Germanium-Tin Tunneling Field-Effect Transistors with A Ge Cap Layer: Improved Subthreshold Swing and I-On/I-Off Ratio

Performance improvement in novel germanium–tin/germanium heterojunction-enhanced p-channel tunneling field-effect transistor

Effects of Uniaxial Strain on Electron Effective Mass and Tunneling Capability of Direct Gap Ge1−xSnx Alloys

Enhanced Carrier Mobility And Direct Tunneling Probability Of Biaxially Strained Ge1-Xsnx Alloys For Field-Effect Transistors Applications

Design of Gesn-Based Heterojunction-Enhanced N-Channel Tunneling Fet with Improved Subthreshold Swing and On-State Current

Achieving Enhanced Hole Transport Capability of Ge1−xSnxalloys Through Uniaxial Compressive Strain

Design of AlInAs/InP Tunnel Junction and Its Application in Devices

Phase‐Coherent Transport in GeSn Alloys on Si

Simulation of GeSn/Ge tunneling field-effect transistors for complementary logic applications

Relaxed Germanium-Tin P-Channel Tunneling Field-Effect Transistors Fabricated on Si: Impacts of Sn Composition and Uniaxial Tensile Strain

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Non-Silicon Microelectronics: Germanium and Germanium-Tin Field-Effect Transistors

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

New Materials for Post-Si Computing: Ge and GeSn Devices

Investigation on the effective mass of Ge1−xSnx alloys and the transferred-electron effect

Bandgap tunability in Zn(Sn,Ge)N(2) semiconductor alloys.