Abstract:A novel planar architecture is proposed for tunnel field-effect transistors (TFETs). The advantages of this architecture are exhibited, taking the InAs/Si TFET as an example, and the effects of different device parameters are analyzed in detail. Owing to the gate field being parallel to the tunneling interface, the gate control is enhanced, and a better electrical performance is obtained. Moreover, different from a conventional TFET, in which the effective tunneling area and current can hardly be modulated by the gate length, in our proposed device, the effective tunneling area and current can be adjusted depending on the actual requirements of circuit design, which increases the flexibility of TFET-based circuit design. In addition, the device architecture can also be extended to other materials, such as Ge/Si and GaSb/InAs, and thus be used for both n-type and p-type devices. The results show that the complementary digital inverter structure with InAs/Si as the n-type TFET and Ge/Si as the p-type TFET would be helpful for future ultralow power applications. This proposed structure without any complicated fabrication steps shows better compatibility with CMOS technology compared to other TFETs with heterojunction and structural innovations presented in theoretical works.

Simulation of GeSn/Ge tunneling field-effect transistors for complementary logic applications

Enhanced Performance of Gesn Source-Pocket Tunnel Field-Effect Transistors for Low-Power Applications

Simulation of the Germanium-Tin Tunneling Field-Effect Transistors with A Ge Cap Layer: Improved Subthreshold Swing and I-On/I-Off Ratio

Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Germanium-source L-shaped TFET with dual in-line tunneling junction

Multi-state Tunnel Field Effect Transistor Based on Face Tunneling with Gate-Source Overlap

Material Characterization And Device Simulation Of Gesn Alloys For Field-Effect Transistors Applications

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Performance improvement in novel germanium–tin/germanium heterojunction-enhanced p-channel tunneling field-effect transistor

Non-Silicon Microelectronics: Germanium and Germanium-Tin Field-Effect Transistors

Design of Gesn-Based Heterojunction-Enhanced N-Channel Tunneling Fet with Improved Subthreshold Swing and On-State Current

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Investigation On Direct-Gap Gesn Alloys For High-Performance Tunneling Field-Effect Transistor Applications

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Device Simulation of GeSe Homojunction and Vdw GeSe/GeTe Heterojunction TFETs for High-Performance Application