Device Simulation of the GeSe Homojunction and Vdw GeSe/GeTe Heterojunction TFETs for High-Performance Application

Qida Wang,Peipei Xu,Hong Li,Fengbin Liu,Shuai Sun,Gang Zhou,Tao Qing,Shaohua Zhang,Jing Lü

DOI: https://doi.org/10.21203/rs.3.rs-848428/v1

2021-01-01

Abstract:Compared with a 2D homogeneous channel, the introduction of a 2D/2D homojunction or heterojunction is a promising method to promote the performance of a TFET mainly by controlling the tunneling barrier. We simulate the 10-nm- L g double-gated GeSe homojunction TFETs and vdW GeSe/GeTe heterojunction TFETs using the ab initio quantum transport calculations. Two constructions are considered for both the homojunction and heterojunction TFETs by placing the BL GeSe and vdW GeSe/GeTe heterojunction as the source or drain while the channel and the remaining drain or source use ML GeSe. The on-state current ( I on ) of the optimal n -type BL-ML GeSe source homojunction TFET and the optimal p -type vdW GeSe/GeTe drain heterojunction TFET are 2320 and 2387 μA μm -1 , respectively, which are 50% and 64% larger than I on of the ML GeSe homogeneous TFET. Inspiringly, the device performances ( I on , intrinsic delay time τ, and power delay product PDP) of both the optimal n -type GeSe homojunction and p -type vdW GeSe/GeTe heterojunction TFETs meet the requirement of the International Roadmap for Device and Systems high-performance device for the year of 2034 (2020 version).