Abstract:This article presents a new line tunneling dominating metal-semiconductor contact-induced SiGe-Si tunnel field-effect transistor with control gate (CG-Line SiGe/Si iTFET). With a structure where two symmetrical control gates at the drain region are given a sufficient negative bias, the overlap of the energy bands at the drain in the OFF-state is effectively suppressed, thus reducing the tunneling probability and significantly decreasing leakage current. Additionally, the large overlap area between the source and gate improves the gate's ability to control the tunneling interface effectively, improving the ON-state current and subthreshold swing characteristics. By using the Schottky contact characteristics of a metal-semiconductor contact with different work functions to form a PN junction, the need to control doping profiles or random doping fluctuations is avoided. Furthermore, as ion implantation is not required, issues related to subsequent annealing are also eliminated, greatly reducing thermal budget. Due to the different material bandgap characteristics selected for the source and drain regions, the probability of overlap of the energy bands in the source region in the ON-state is increased and that in the drain region in the OFF-state is reduced. Based on the feasibility of the actual fabrication process and through rigorous 2D simulation studies, improvements in subthreshold swing and high on/off current ratio can be achieved simultaneously based on the proposed device structure. Additionally, the presence of the control gate structure effectively suppresses leakage current, further enhancing its potential for low-power-consumption applications.

Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction*

Germanium-source L-shaped TFET with dual in-line tunneling junction

Lateral Ge/Sige/Si Hetero-Channel P-Type Mosfets

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Investigation Of Line Tunnel Field Effect Transistor With Ge/Si Heterojunction

Heteromaterial Gate Tunnel Field Effect Transistor with Lateral Energy Band Profile Modulation

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

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Si-based hetero-material-gate tunnel field effect transistor: Analytical model and simulation

Fabrication and Characterization of a Novel Si Line Tunneling TFET with High Drive Current

Study of the electrical parameters of a dual-material double-gate TFET using a strained type II staggered Ge1−x−ySixSny/Ge1−a−bSiaSnb heterojunction

Investigation of SiGe/Si heterojunction inductive line tunneling TFET with source Schottky contact for prospect ultra-low power applications

Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Device Simulation of GeSe Homojunction and Vdw GeSe/GeTe Heterojunction TFETs for High-Performance Application

Performance Analysis of Heterojunction and Hetero Dielectric Triple Material Double Gate TFET

Device Simulation of the GeSe Homojunction and Vdw GeSe/GeTe Heterojunction TFETs for High-Performance Application

Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET