Abstract:Vertical gate‐all‐around nanowire n‐FETs based on GeSn‐alloys with Sn‐contents of 8% and 11% are presented. A great improvement in Ion, gm, and SS is found with increased Sn‐content. A fivefold increase in on‐current is observed for 11%‐GeSn compared to Ge, underlining the potential of GeSn for nanoelectronics applications. As transistors continue to shrink, the need to replace silicon with materials of higher carrier mobilities becomes imperative. Group‐IV semiconductors, and particularly GeSn alloys, stand out for their high electron and hole mobilities, making them attractive for next‐generation electronics. While Ge p‐channel devices already possess a high hole mobility, here the focus is on enhancing n‐channel transistor performance by utilizing the superior electron mobility of GeSn as channel material. Vertical gate‐all‐around nanowire (GAA NW) transistors are fabricated using epitaxial GeSn heterostructures that leverage the material growth, in situ doping, and band engineering across source/channel/drain regions. It is demonstrated that increasing Sn content in GeSn alloys constantly improves the device performances, reaching a fivefold on‐current improvement over standard Ge devices for 11 at.% Sn content. The present results underline the real potential of the GeSn alloys to bring performance and energy efficiency to future nanoelectronics applications.

Design of Gesn-Based Heterojunction-Enhanced N-Channel Tunneling Fet with Improved Subthreshold Swing and On-State Current

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Enhanced Performance of Gesn Source-Pocket Tunnel Field-Effect Transistors for Low-Power Applications

Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain

Investigation On Direct-Gap Gesn Alloys For High-Performance Tunneling Field-Effect Transistor Applications

Simulation of GeSn/Ge tunneling field-effect transistors for complementary logic applications

On-State Current Optimization for SnSe2 Tunneling Field Effect Transistors with Silicene Electrodes

Study on the Ge1−xSnx/HfO2 Interface and Its Impacts on Ge1−xSnx Tunneling Transistor

Simulation of the Germanium-Tin Tunneling Field-Effect Transistors with A Ge Cap Layer: Improved Subthreshold Swing and I-On/I-Off Ratio

Enhancing Device Performance with High Electron Mobility GeSn Materials

Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction*

Device Simulation of the GeSe Homojunction and Vdw GeSe/GeTe Heterojunction TFETs for High-Performance Application

Material Characterization And Device Simulation Of Gesn Alloys For Field-Effect Transistors Applications

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Device Simulation of GeSe Homojunction and Vdw GeSe/GeTe Heterojunction TFETs for High-Performance Application

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Lifting on-state currents for GeS-based tunneling field-effect transistors with electrode optimization

Design and Simulation of a Novel Graded-Channel Heterojunction Tunnel FET With High ${I} _{\scriptscriptstyle\text {ON}}/{I} _{\scriptscriptstyle\text {OFF}}$ Ratio and Steep Swing

Hole Mobility Enhancement of GeSn/Ge pMOSFETs with an Interlayer Formed by Sn-Assisted Oxynitridation