Abstract:Introduction It has been increasingly difficult to further improve the performance of Si MOSFETs by conventional device scaling down . Therefore, the employment of high mobility channel materials has been considered as one of the most promising solutions to enhance the CMOS devices performance . Ge has been attracting a lot of interest as the channel material for MOSFETs, due to its much higher mobility for both hole and electron compared with those in Si . Although high mobility Ge MOSFETs has been realized by using the thick GeO2/Ge gate stacks , EOT scaling using high-k dielectrics is mandatory to realize high performance Ge MOSFETs. However, it has been found that the mobility is severely decreased in thin EOT high-k/Ge MOSFETs, attributable to the degradation of Ge MOS interface qualities. Thus, the formation of advanced Ge gate stacks with both ultrathin EOT and good interface qualities (low Dit) is the critical issue to obtain superior Ge MOSFETs. In this research, we demonstrate a plasma post oxidation (PPO) technique to oxidize the Ge surface by using oxygen plasma exposure to ALD high-k/Ge structures. Here the high-k layer serves as the oxygen barrier to prevent the growth of unnecessarily thick GeOx interfacial layer (IL), as well as the protection layer to eliminate any damage to the ultrathin GeOx/Ge interface after its formation. As a result, the high-k/GeOx/Ge gate stacks have been formed with sub-nm EOT and low Dit simultaneously. The high mobility Ge MOSFETs have also been realized by using these gate stack structures.

Hole Mobility Enhancement of GeSn/Ge pMOSFETs with an Interlayer Formed by Sn-Assisted Oxynitridation

Enhanced hole mobility of Ge/GeSn pMOSFETs with a GeSnO interface layer and a NiGe Schottky source/drain

Mobility Enhancement Techniques for Ge and GeSn MOSFETs

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Novel Sn-assisted nitridation of Ge/HfO2 interface and improved electrical properties of the MOS capacitor

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Physical Origins of High Normal Field Mobility Degradation in Ge P- and N-Mosfets with GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Mobility Improvement Of Ultrathin-Body Germanium-On-Insulator (Geoi) Mosfets On Flipped Smart-Cut (Tm) Geoi Substrates

High Mobility Ultrathin Ge And Gesn Channel Pmosfets Fabricated On Si Platform

High Mobility Strained-Ge Pmosfets with 0.7-Nm Ultrathin EOT Using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks and Strain Modulation

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Hole Mobility in the Ultra-Thin-body Junctionless Germanium-on-insulator P-Channel Metal-Oxide-semiconductor Field-Effect Transistors

Hole mobility enhancement of pMOSFETs with strain channel induced by Ge pre-amorphization implantation for source/drain extension

Nige Metal Source/Drain Ge Pmosfets For Future High Performance Vlsi Circuits Applications

Enhancing Device Performance with High Electron Mobility GeSn Materials

(Invited) Significant Enhancement of High-Ns Electron Mobility in Ge N-Mosfets with Atomically Flat Ge/GeO2 Interface

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation