Abstract:Thin HfTiO gate dielectric is deposited by reactive co-sputtering method followed by wet or dry N2 anneal. The effects of Ti content on the performance of HfTiO gate dielectric are investigated by using different sputtering powers for the Ti target. Experimental results indicate that as the Ti content increases, the dielectric constant (κ) can increase up to 40 for a Ti content of 28%. However, when the Ti content is too high, the interface properties and gate leakage properties are deteriorated. On the contrary, results show that owing to the hydrolyzable property of GeOx, the wet-N2 anneal can greatly suppress the growth of unstable low-κ GeOx interlayer, resulting in lower interface-state density and gate leakage current, in addition to larger κ value. In this study, when the sputtering power of the Ti target is 80W together with a 25-W power for the Hf target and a post-deposition anneal (PDA) in wet-N2 ambient at 500°C for 300s, excellent device performance is achieved: equivalent oxide thickness of 0.72nm, equivalent dielectric constant of 39, interface-state density of 6.5×1011eV−1cm−2 and gate leakage current of 5.7×10−4A/cm2 at Vg=1V. Therefore, in order to obtain high-quality HfTiO gate dielectric for small-scaled Ge MOS devices, not only should the Ti content be optimized, the PDA should also be done in a wet-N2 ambient.

Novel Sn-assisted nitridation of Ge/HfO2 interface and improved electrical properties of the MOS capacitor

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Hole Mobility Enhancement of GeSn/Ge pMOSFETs with an Interlayer Formed by Sn-Assisted Oxynitridation

Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient

Improved Electrical Properties of Ge Metal-Oxide-semiconductor Devices with HfO2 Gate Dielectrics Using an Ultrathin GeSnOx Film As the Surface Passivation Layer

Modification of Band Alignments and Optimization of Electrical Properties of Ingazno Mos Capacitors with High-K Hfoxny Gate Dielectrics

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

Low temperature (210 °C) fabrication of Ge MOS capacitor and controllability of its flatband voltage

Suppression of Ald-Induced Degradation of Ge Mos Interface Properties by Low Power Plasma Nitridation of Geo2

Enhanced hole mobility of Ge/GeSn pMOSFETs with a GeSnO interface layer and a NiGe Schottky source/drain

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Hfo2/Geoxny/Ge Gate Stacks with Sub-Nanometer Capacitance Equivalent Thickness and Low Interface Trap Density by in Situ Nh3 Plasma Pretreatment

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Ultrathin Geoxny Interlayer Formed By In Situ Nh3 Plasma Pretreatment For Passivation Of Germanium Metal-Oxide-Semiconductor Devices

Improvement of SiGe MOS interfaces by plasma post-nitridation for SiGe high-k MOS optical modulators