Abstract:Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In this regard, semiconductor membranes emerged as a versatile class of nanoscale materials to control lattice strain and engineer complex heterostructures leading to the development of a variety of innovative applications. Herein we exploit this quasi-two-dimensional platform to tune simultaneously the lattice parameter and bandgap energy in group IV GeSn semiconductor alloys. As Sn content is increased to reach a direct band gap, these semiconductors become metastable and typically compressively strained. We show that the release and transfer of GeSn membranes lead to a significant relaxation thus extending the absorption wavelength range deeper in the mid-infrared. Fully released Ge$_{0.83}$Sn$_{0.17}$ membranes were integrated on silicon and used in the fabrication of broadband photodetectors operating at room temperature with a record wavelength cutoff of 4.6 $\mu$m, without compromising the performance at shorter wavelengths down to 2.3 $\mu$m. These membrane devices are characterized by two orders of magnitude reduction in dark current as compared to devices processed from as-grown strained epitaxial layers. The latter exhibit a content-dependent, shorter wavelength cutoff in the 2.6-3.5 $\mu$m range, thus highlighting the role of lattice strain relaxation in shaping the spectral response of membrane photodetectors. This ability to engineer all-group IV transferable mid-infrared photodetectors lays the groundwork to implement scalable and flexible sensing and imaging technologies exploiting these integrative, silicon-compatible strained-relaxed GeSn membranes.

Theoretical investigation of tensile strained GeSn waveguide with Si₃N₄ liner stressor for mid-infrared detector and modulator applications.

Tensile strained Ge0.90Sn0.10 photodiode integrated with Si3N4 liner stressor for mid-infrared applications

Tensile-Strained Mid-Infrared GeSn Detectors Wrapped in Si 3N 4 Liner Stressor: Theoretical Investigation of Impact of Device Architectures

GeSn/SiGeSn Photonic Devices for Mid-Infrared Applications: Experiments and Calculations

Simulation investigation of tensile strained GeSn fin photodetector with Si(3)N(4) liner stressor for extension of absorption wavelength.

Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor

Theoretical Investigation of Tensile-Strained GeSn / SiGeSn Multiple Quantum Well Laser Wrapped in Si 3 N 4 Liner Stressor Volume 10 , Number 1 , February 2018

Design of Tensile-Strained GeSn/SiGeSn Structure for Low Threshold Mid-infrared Laser Application

Theoretical Investigation of Strain-Adjustable Ge0.92Sn0.08 Light-Emitting Diodes with Giant Magnetostrictive Stressor for Short-Wave Infrared Light Source

Germanium-tin Alloys: Applications for Optoelectronics in Mid-Infrared Spectra

All-Group IV membrane room-temperature mid-infrared photodetector

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Uniformly Tensile-Strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

Mid-infrared Imaging Using Strain-Relaxed Ge 1- x Sn x Alloys Grown on 20 nm Ge Nanowires

Theoretical Analysis of Performance Enhancement in GeSn/SiGeSn Light-Emitting Diode Enabled by Si3N4 Liner Stressor Technique.

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Preliminary Design of a Tensile-Strained P-Type Si/SiGe Quantum Well Infrared Photodetector

Simulation and optimization of strained GeSn laser with SiN-induced stress

Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector

Strained germanium thin film membrane on silicon substrate for optoelectronics

Optoelectronic Properties for the Compressively Strained Ge1−xSnx Films Grown on Ge(004)