Abstract:Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge$_{1-x}$Sn$_x$) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon wafers using Ge as an interlayer. However, the large lattice mismatch in this heteroepitaxy protocol leads to the build-up of compressive strain in the grown layers. This compressive strain limits the material quality and its thermal stability besides expanding the band gap, thereby increasing the Sn content needed to cover a broader range in the mid-infrared. Released Ge$_{1-x}$Sn$_x$ membranes provide an effective way to mitigate these harmful effects of the epitaxial strain and control the band gap energy while enabling the hybrid integration onto different substrates. With this perspective, herein strain-relaxed Ge$_{0.89}$Sn$_{0.11}$ membranes are fabricated and subsequently transfer-printed with metal contacts to create multiple photodetectors in a single transfer step. The resulting photodetectors exhibit an extended photodetection cutoff reaching a wavelength of $3.1 \,\mu$m, coupled with a significant reduction in the dark current of two orders of magnitude as compared to as-grown photoconductive devices. The latter yields a reduced cutoff of $2.8 \,\mu$m due to the inherent compressive strain. Furthermore, the impact of chemical treatment and annealing on the device performance was also investigated showing a further reduction in the dark current. The demonstrated transfer printing, along with the use of an adhesive layer, would allow the transfer of multiple GeSn membranes onto virtually any substrate. This approach paves the way for scalable fabrication of hybrid optoelectronic devices leveraging the tunable band gap of Ge$_{1-x}$Sn$_x$ in the mid-wave infrared range.

Tensile strained Ge0.90Sn0.10 photodiode integrated with Si3N4 liner stressor for mid-infrared applications

Theoretical investigation of tensile strained GeSn waveguide with Si₃N₄ liner stressor for mid-infrared detector and modulator applications.

Simulation investigation of tensile strained GeSn fin photodetector with Si(3)N(4) liner stressor for extension of absorption wavelength.

GeSn/SiGeSn Photonic Devices for Mid-Infrared Applications: Experiments and Calculations

Tensile-Strained Mid-Infrared GeSn Detectors Wrapped in Si 3N 4 Liner Stressor: Theoretical Investigation of Impact of Device Architectures

Design of Tensile-Strained GeSn/SiGeSn Structure for Low Threshold Mid-infrared Laser Application

Uniformly Tensile-Strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

Theoretical Investigation of Strain-Adjustable Ge0.92Sn0.08 Light-Emitting Diodes with Giant Magnetostrictive Stressor for Short-Wave Infrared Light Source

Strain-Engineering-Driven Photomechanical–Photoelectric Coupled Flexible Photodetector Based on Hexagonal Silicon Nanowire Films

All-Group IV membrane room-temperature mid-infrared photodetector

PIC-integrable, Uniformly Tensile-Strained Ge-on-insulator Photodiodes Enabled by Recessed SiNx Stressor

Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor

Preliminary Design of a Tensile-Strained P-Type Si/SiGe Quantum Well Infrared Photodetector

Theoretical Investigation of Tensile-Strained GeSn / SiGeSn Multiple Quantum Well Laser Wrapped in Si 3 N 4 Liner Stressor Volume 10 , Number 1 , February 2018

Strained germanium thin film membrane on silicon substrate for optoelectronics

Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity

Transfer-printed multiple Ge$_{0.89}$Sn$_{0.11}$ membrane mid-infrared photodetectors

Theoretical Analysis of Performance Enhancement in GeSn/SiGeSn Light-Emitting Diode Enabled by Si3N4 Liner Stressor Technique.

Germanium-tin Alloys: Applications for Optoelectronics in Mid-Infrared Spectra

An Energy Band Design for P-Type Tensile Strained Si/SiGe Quantum Well Infrared Photodetectors

The Optical Property of Tensile-Strained N-Type Doped Ge