Abstract:Internet of Things applications, including medical diagnostics, imaging and industrial process controls, pollution monitoring or real-time motion control, push the extension of the Si photonics towards mid-infrared range. In recent years, group IV SiGeSn-based optoelectronic devices including light emitting, detectors, modulators, and CMOS devices have been developed. The main advantage of SiGeSn is the bandgap tunability in the range between 1.5 to 5 μm via Si and Sn compositions. Remarkably, the GeSn binary alloy becomes a direct bandgap semiconductor at a relative low Sn content of about 7-8 at.% opening the quest for the realization of monolithically integrated laser sources on Si. In this direction, from the first laser emission proof in 2015 remarkable progress has been done. Supported by epitaxial growth success, processing technology, and cavity design, the laser emission of optically pumped was continuously increased from 80K to 270K. The main role here was played by increasing the Sn content up a concentration of 17 at.%. The next major improvement came from layer transfer technology allowing defect engineering and heat management. Their combination made possible room temperature lasing. However, the real life application requires low laser threshold. Here the use of multiple quantum wells based on SiGeSn/GeSn heterostructures and strain engineering allow a remarkable threshold reduction to values of about 1 kA/cm 2 . Interestingly, modeling shows that the very epitaxial challenging of having high Sn contents can be reduced by band structure engineering via introducing tensile strain and, in addition, larger gains are possible compared with high-Sn strain free layers. The optical laser spectrum at 0 °C for a GeSn layer under 1 % biaxial tensile strain is shown in Fig 1a. The next step is the realization of an electrical pumped GeSn laser. The first data indicate that both waveguide and microdisk cavities can be electrically pumped leading to low temperature laser emission. The effect of the geometry and strain relaxation of under-etched cavities on the laser emission is under study. Figure 1b shows an exemplary spectrum and current-in light-out (LI) curve for a device with a SiGeSn/GeSn heterostructure taken at 50 K. Figure 1

Design of Tensile-Strained GeSn/SiGeSn Structure for Low Threshold Mid-infrared Laser Application

Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor

Theoretical Investigation of Tensile-Strained GeSn / SiGeSn Multiple Quantum Well Laser Wrapped in Si 3 N 4 Liner Stressor Volume 10 , Number 1 , February 2018

Strained GeSn laser with multiple fins structure based on SiN stress

GeSn/SiGeSn Photonic Devices for Mid-Infrared Applications: Experiments and Calculations

Simulation and optimization of strained GeSn laser with SiN-induced stress

Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

Theoretical investigation of tensile strained GeSn waveguide with Si₃N₄ liner stressor for mid-infrared detector and modulator applications.

Tensile strained Ge0.90Sn0.10 photodiode integrated with Si3N4 liner stressor for mid-infrared applications

Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser

Electrically Injected mid-infrared GeSn laser on Si operating at 140 K

1D photonic crystal direct bandgap GeSn-on-insulator laser

Theoretical Analysis of Performance Enhancement in GeSn/SiGeSn Light-Emitting Diode Enabled by Si3N4 Liner Stressor Technique.

Gesn Alloys: From Optical to Electrical Pumped Lasers

All‐Around HfO2 Stressor for Tensile Strain in GeSn‐on‐Insulator Nanobeam Lasers

Investigation of lasing in highly strained germanium at the crossover to direct band gap

Tensile-Strained Mid-Infrared GeSn Detectors Wrapped in Si 3N 4 Liner Stressor: Theoretical Investigation of Impact of Device Architectures

The Optical Property of Tensile-Strained N-Type Doped Ge

Optically Pumped Si-based Edge-Emitting GeSn Laser

Simulation investigation of tensile strained GeSn fin photodetector with Si(3)N(4) liner stressor for extension of absorption wavelength.

Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering