Abstract:Germanium alloyed with α-tin (GeSn) transitions to a direct bandgap semiconductor of significance for optoelectronics. It is essential to localize the carriers within the active region for improving the quantum efficiency in a GeSn based laser. In this work, epitaxial GeSn heterostructure material systems were analyzed to determine the band offsets for carrier confinement: (i) a 0.53% compressively strained Ge 0.97 Sn 0.03 /AlAs; (ii) a 0.81% compressively strained Ge 0.94 Sn 0.06 /Ge; and (iii) a lattice matched Ge 0.94 Sn 0.06 /In 0.12 Al 0.88 As. The phonon modes in GeSn alloys were studied using Raman spectroscopy as a function of Sn composition, that showed Sn induced red shifts in wavenumbers of the Ge–Ge longitudinal optical phonon mode peaks. The material parameter b representing strain contribution to Raman shifts of a Ge 0.94 Sn 0.06 alloy was determined as b = 314.81 ± 14 cm –1 . Low temperature photoluminescence measurements were performed at 79 K to determine direct and indirect energy bandgaps of E g,Γ = 0.72 eV and E g, L = 0.66 eV for 0.81% compressively strained Ge 0.94 Sn 0.06 , and E g,Γ = 0.73 eV and E g, L = 0.68 eV for lattice matched Ge 0.94 Sn 0.06 epilayers. Chemical effects of Sn atomic species were analyzed using x-ray photoelectron spectroscopy (XPS), revealing a shift in Ge 3d core level (CL) spectra towards the lower binding energy affecting the bonding environment. Large valence band offset of ΔE V = 0.91 ± 0.1 eV and conduction band offset of ΔE C,Γ–X = 0.64 ± 0.1 eV were determined from the Ge 0.94 Sn 0.06 /In 0.12 Al 0.88 As heterostructure using CL spectra by XPS measurements. The evaluated band offset was found to be of type-I configuration, needed for carrier confinement in a laser. In addition, these band offset values were compared with the first-principles-based calculated Ge/InAlAs band alignment, and it was found to have arsenic up-diffusion limited to 1 monolayer of epitaxial GeSn overlayer, ruling out the possibility of defects induced modification of band alignment. Furthermore, this lattice matched GeSn/InAlAs heterostructure band offset values were significantly higher than GeSn grown on group IV buffer/substrates. Therefore, a lattice matched GeSn/InAlAs material system has large band offsets offering superior carrier confinement to realize a highly efficient GeSn based photonic device.

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Gesn Alloys: From Optical to Electrical Pumped Lasers

Electrically Injected mid-infrared GeSn laser on Si operating at 140 K

Si-Based Mid-Infrared GeSn-Edge-Emitting Laser with Operating Temperature Up to 260 K

Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K

Design of Tensile-Strained GeSn/SiGeSn Structure for Low Threshold Mid-infrared Laser Application

Lasing in direct-bandgap GeSn alloy grown on Si

1D photonic crystal direct bandgap GeSn-on-insulator laser

Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

Mid-infrared silicon photonic lasers based on GeSn slab waveguide on silicon

Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy

GaN-based Photonic-Crystal Surface-Emitting Lasers Made from Edge-Emitting Laser Structure

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Strained GeSn laser with multiple fins structure based on SiN stress

Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si

Optically Pumped Mid-Infrared Light Emitter on Silicon

Simulation and optimization of strained GeSn laser with SiN-induced stress

Lattice matched GeSn/InAlAs heterostructure: Role of Sn in energy band alignment, atomic layer diffusion and photoluminescence

AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$

Continuous-wave GeSn light emitting diodes on silicon with $2.5 \, μ$m room-temperature emission

Electrically Pumped Epitaxially Regrown GaSb‐Based Type‐I Quantum‐Well Surface‐Emitting Lasers with Buried High‐Index‐Contrast Photonic Crystal Layer