Abstract:GeSn materials have attracted considerable attention for their tunable band structures and high carrier mobilities, which serve well for future photonic and electronic applications. This research presents a novel method to incorporate Sn content as high as 18% into GeSn layers grown at 285–320 °C by using SnCl4 and GeH4 precursors. A series of characterizations were performed to study the material quality, strain, surface roughness, and optical properties of GeSn layers. The Sn content could be calculated using lattice mismatch parameters provided by X-ray analysis. The strain in GeSn layers was modulated from fully strained to partially strained by etching Ge buffer into Ge/GeSn heterostructures . In this study, two categories of samples were prepared when the Ge buffer was either laterally etched onto Si wafers, or vertically etched Ge/GeSnOI wafers which bonded to the oxide. In the latter case, the Ge buffer was initially etched step-by-step for the strain relaxation study. Meanwhile, the Ge/GeSn heterostructure in the first group of samples was patterned into the form of micro-disks. The Ge buffer was selectively etched by using a CF4/O2 gas mixture using a plasma etch tool. Fully or partially relaxed GeSn micro-disks showed photoluminescence (PL) at room temperature. PL results showed that red-shift was clearly observed from the GeSn micro-disk structure, indicating that the compressive strain in the as-grown GeSn material was partially released. Our results pave the path for the growth of high quality GeSn layers with high Sn content, in addition to methods for modulating the strain for lasing and detection of short-wavelength infrared at room temperature.

Germanium-tin Alloys: Applications for Optoelectronics in Mid-Infrared Spectra

Mid-infrared Imaging Using Strain-Relaxed Ge 1- x Sn x Alloys Grown on 20 nm Ge Nanowires

Tensile-Strained Mid-Infrared GeSn Detectors Wrapped in Si 3N 4 Liner Stressor: Theoretical Investigation of Impact of Device Architectures

GeSn/SiGeSn Photonic Devices for Mid-Infrared Applications: Experiments and Calculations

Theoretical investigation of tensile strained GeSn waveguide with Si₃N₄ liner stressor for mid-infrared detector and modulator applications.

Large Area Germanium Tin Nanometer Optical Film Coatings on Highly Flexible Aluminum Substrates

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Mid-Infrared Detectors and Imagers Integrating All-Group IV Nanowires

Advances in GeSn alloys for MIR applications

Infrared Tubular Microcavity Based on Rolled-Up GeSn/Ge Nanomembranes.

Theoretical Investigation of Strain-Adjustable Ge0.92Sn0.08 Light-Emitting Diodes with Giant Magnetostrictive Stressor for Short-Wave Infrared Light Source

Tensile strained Ge0.90Sn0.10 photodiode integrated with Si3N4 liner stressor for mid-infrared applications

Design of Tensile-Strained GeSn/SiGeSn Structure for Low Threshold Mid-infrared Laser Application

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Growth of silicon based germanium tin alloys

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Near-field effect in the infrared range through periodic Germanium subwavelength arrays.

Uniformly Tensile-Strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

CMOS-compatible antimony-doped germanium epilayers for mid-infrared low-loss high-plasma-frequency plasmonics.

Effects of volumetric and potential energy change on indirect to direct bandgap transition of Ge/Sn alloy