Abstract:AbstractStrained layer semiconductor structures provide possibilites for novel electronic devices. When a semiconductor layer is deposited epitaxially onto a single crystal substrate with the same structure but a slightly different lattice parameter, the semiconductor layer grows pseudomorphically with a misfit strain that can be accomodated elastically below a critical thickness. When the critical thickness is exceeded, the elastic strain energy builds up to a point where it becomes energetically favorable to form misfit dislocations. In the absence of a capping layer, surface roughening may also take place which causes strain relaxation in the form of 2D ridges or islands via surface diffusion. At sharp valley regions on the surface, amplified local stresses can cause further defect nucleation and propagation. These defects can be detrimental to the electrical performance of devices by acting as electron-hole recombination centers or current leakage channels. In this paper, we present observations and analyses of two novel defects nucleated in heteroepitaxial Si1−xGex thin films through surface roughening. Heteroepitaxial films 500 Å thick and containing 22% Ge are deposited by LPCVD. These initially flat films are subjected to various annealing conditions in a H2 atmosphere to induce morphological evolution and defect formation. High resolution transmission electron microscopy and atomic force microscopy have been used to study the morphology of defects at the film surface and at the film/substrate interface.

Strain and Stability of Ultrathin Ge Layers in Si/Ge/Si Axial Heterojunction Nanowires.

Strain engineering in Ge/GeSn core/shell nanowires

Strain Modulated Electronic Properties of Ge Nanowires - A First Principles Study

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Strain Release Enabled Bandgap Scaling in Ge Nanowire and Tunnel FET Application

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

A study on the strain stability of Si/SiGe layer structure in a heterojunction bipolar transistor during thermal processing

Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Strain evolution in GaN Nanowires: from free-surface objects to coalesced templates

Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process

3D Nanostructures on Ge/Si(100) Wetting Layers: Hillocks and Pre-Quantum Dots

Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>Core–Shell Nanowire

Impact of Inhomogeneous Strain on the Valence Band Structures of Ge-Si Core-Shell Nanowires

Impact Of Strain On The Performance Of Ge-Si Core-Shell Nanowire Field Effect Transistors

Strain Evolution in SiGe Nanosheet Transistor Process Flow

Strained hetero interfaces in Si/SiGe/SiGe/SiGe multi-layers studied by scanning moiré fringe imaging

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys