Abstract:AbstractStrained layer semiconductor structures provide possibilites for novel electronic devices. When a semiconductor layer is deposited epitaxially onto a single crystal substrate with the same structure but a slightly different lattice parameter, the semiconductor layer grows pseudomorphically with a misfit strain that can be accomodated elastically below a critical thickness. When the critical thickness is exceeded, the elastic strain energy builds up to a point where it becomes energetically favorable to form misfit dislocations. In the absence of a capping layer, surface roughening may also take place which causes strain relaxation in the form of 2D ridges or islands via surface diffusion. At sharp valley regions on the surface, amplified local stresses can cause further defect nucleation and propagation. These defects can be detrimental to the electrical performance of devices by acting as electron-hole recombination centers or current leakage channels. In this paper, we present observations and analyses of two novel defects nucleated in heteroepitaxial Si1−xGex thin films through surface roughening. Heteroepitaxial films 500 Å thick and containing 22% Ge are deposited by LPCVD. These initially flat films are subjected to various annealing conditions in a H2 atmosphere to induce morphological evolution and defect formation. High resolution transmission electron microscopy and atomic force microscopy have been used to study the morphology of defects at the film surface and at the film/substrate interface.

Strained hetero interfaces in Si/SiGe/SiGe/SiGe multi-layers studied by scanning moiré fringe imaging

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Depth profiles of the interfacial strains of Si 0.7 Ge 0.3 /Si using three-beam Bragg-surface diffraction

Strain at Native ${\rm SiO}_{2}/{\rm Si}(111)$ Interface Characterized by Strain-Scanning Second-Harmonic Generation

Study of strain distribution in GeSi/Si strained heterostructure

Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Experimental Analyses on Multiscale Structural and Mechanical Properties of Ε-Si/gesi/c-si Materials

Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction

Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

Investigation of strain and thin film relaxation in Ge xSi 1-x/Si strained-layer superlattice by dark-field electron holography

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Atomic‐scale Strain Analysis for Advanced Si/SiGe Heterostructure by Using Transmission Electron Microscopy

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

The growth and quality evaluation of strained Si material with multilayer structure

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

Characterization of ultra smooth interfaces in Mo/Si-multilayers

Effect of Inter-Layer Strain Interaction on the Optical Properties of Ge/Si(001) Island Multi-Layers

Surface Roughening in Lattice Mismatched Heteroepitaxial Thin Films.