Abstract:Basic understanding of the fundamental processes in crystal growth as well as the structural quality of diamond synthesized by chemical vapour deposition on iridium surfaces has reached a high level for samples with (001) orientation. Diamond deposition on the alternative (111) surface is generally more challenging but of appreciable technological interest, too. In the present work, heteroepitaxy of diamond on Ir/YSZ/Si(111) with different off-axis angles and directions has been studied. During the growth of the first microns, strong and complex intrinsic stress states were rapidly formed. They restricted the range of suitable temperatures in this study to values between 830 °C and 970 °C. At low-stress conditions, the maximum growth rates were about 1 μm/h. They facilitated long-time processes which yielded pronounced structural improvements with minimum values of 0.08° for the azimuthal mosaic spread, 4 × 107 cm−2 for the dislocation density and 1.8 cm−1 for the Raman line width. This refinement is even faster than on (001) growth surfaces. It indicates substantial differences between the two crystal directions in terms of merging of mosaic blocks and annihilation of dislocations. Crystals with a thickness of up to 330 μm have been grown. The correlation of photoluminescence and μ-Raman tomograms with topography data also revealed fundamental differences in the off-axis growth between (001) and (111) orientation. Finally, the analysis of the microscopic structures at the growth surface provided the base for a model that can conclusively explain the intriguing reversal of stress tensor anisotropy caused by a simple inversion in sign of the off-axis angle.

Heteroepitaxial Diamond Films on Silicon (001): Interface Structure and Crystallographic Relations Between Film and Substrate

The Crystallographic Relationship of Heteroepitaxial Diamond Films on Scratched Silicon Substrates

Interfacial Structure Between Epitaxial Diamond Films and Silicon Substrates

Local Heteroepitaxial Diamond Formed Directly on Silicon-Wafers and Observed by High-Resolution Electron-Microscopy

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition

Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

45-degree rotated epitaxial nucleation of diamond on silicon using chemical vapor deposition

Epitaxial growth of SiC on (100) Diamond

Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers

Growth, stress, and defects of heteroepitaxial diamond on Ir/YSZ/Si(111)

Diamond/Ir/SrTiO3: A material combination for improved heteroepitaxial diamond films

Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces

Study Of Antiphase Boundaries And Local 3x1 Configuration On The (001) Surface Of Homoepitaxial Diamond Films By Scanning Tunneling Microscopy

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex

A Study of Interface Structure Between Diamond Film and Silicon Substrate

Synthesis of Oriented Textured Diamond Films on Silicon Via Hot Filament Chemical Vapor Deposition

Characterization of an Epitaxial-Growth Diamond Thin Film

Structural characterization of low temperature epi-silicon grown on {100} and {111} Si substrates using ultrahigh resolution cross-sectional TEM