Abstract:As silicon photomultiplier (SiPM) technology develops, its possible applications are being growingly expanded. However, the current technical obstacle is the signal readout from large-scale, multi-pixel SiPMs, especially in a large nuclear imaging device. Although the application-specific integrated circuits (ASICs) provide ways to reach that goal, it needs a long period with iterative electronic process and a very high cost. We developed a high-integrated positron emission tomography (PET) electronics system with field programmable gate array based charge-to-digital converter (FPGA-QDC) technology instead of the ASICs. Unlike traditional FPGA-based charge readout method in which low-voltage differential signaling (LVDS) receivers serve as analog voltage comparators, in the proposed electronics system voltage-referenced receivers work as analog comparators.Theoretically, nearly all of input/output (I/O) ports in the FPGA can achieve the function of analog comparators using voltage-referenced I/O standard. The electronics system is constructed using off-the-shelf low-cost commercial components. Therefore, it is feasible to fast build a distributed readout system with multiple such electronics system. The flexibility and reconfigurability of the FPGA provide multi-channel grouping and diverse triggering for different kinds of detector configurations, such as row/column summation and resistor-based readout. These features are greatly sought after in readout electronics for the SiPM-based radiation detectors. Experimental results show that the proposed highly-integrated electronics system overcomes the bottleneck that has limited the development of advanced PET detectors and scanners.

A Low Power and Radiation-Tolerant Fpga Implemented in Fd Soi Process

Low-voltage and High-Speed FPGA I/O Cell Design in 90nm CMOS

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

A FPGA prototype design emphasis on low power technique.

A 22nm FDSOI Technology Optimized for RF/mmWave Applications

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Patterned silicon-on-insulator technology for RF Power LDMOSFET

Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET

A compact and highly integrated 128-channel FPGA-based readout electronics for nuclear imaging application

A low operating power FinFET transistor module featuring scaled gate stack and strain engineering for 32/28nm SoC technology

0.25 Mm SOI RF nMOSFETs depleted partially

A Path to Energy Efficiency and Reliability for ICs: Fully Depleted Silicon-on-Insulator (FD-SOI) Devices Offer Many Advantages

Channel Design of Silicon-On-Insulator (soi) Mosfet for Low-Voltage Low-Power Application

Design and Fabrication of LDMOS Power Device on SOI Substrate

A PD-SOI Based DTI-LOCOS Combined Cross Isolation Technique for Minimizing TID Radiation Induced Leakage in High Density Memory

A New FPGA Architecture Suitable for DSP Applications

High Performance SOI Gate-Bulk Connected LCMOSFET for RF Power Amplifier Application in Short and Medium Range Wireless Communication Systems

22Ffl: A High Performance and Ultra Low Power Finfet Technology for Mobile and Rf Applications

A novel input/output interface circuit with high voltage tolerant and PCI compliant capabilities

SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Improving Fault Tolerance for FPGA SoCs Through Post Radiation Design Analysis