Abstract:This paper applies the carbon materials (i.e., SWCNT, MWCNT, and GNR) as new prospective filler materials of through silicon vias (TSV) for replacing the conventional copper (Cu) to improve the thermal performance of three-dimensional integrated circuits (3)-D ICs). The thermal performance of 3-D ICs with integrated TSVs is investigated and the corresponding numerical calculation model is established in this work. Moreover, the thermal performance of 3-D ICs with integrated carbon materials based TSV is investigated by applying our proposed numerical calculation model. The calculation results illustrate that the 3D-ICs with integrated SWCNT based TSV have a greater thermal performance, as compared with the 3-D ICs integrated other materials (i.e., MWCNT, GNR, and Cu) based TSV. Furthermore, it is also manifested that the temperature of die layer in 3-D ICs can be reduced by increasing the thermal conductivity of package and heat sink, by increasing the radius of TSV and decreasing the spacing between TSV. In addition, it is found that the results of our proposed numerical calculation model are fairly consistent with COMSOL simulation and the maximum relative error for them is not exceeding 2%. The proposed new filler materials in this work has many potential applications in improving the heat dissipation performance of 3-D ICs, meanwhile the presented numerical calculation model can provide guidelines for thermal design of 3-D ICs.

Thermal Modeling of Three-Dimensional Integrated Circuits Considering the Thermal Removal Capability of Different TSVs

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Lumped 3-D Equivalent Thermal Circuit Model for Transient Thermal Analysis of TSV Array

System-Level Analysis of 3D ICs with Thermal TSVs

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrothermal modelling of through silicon via (TSV) interconnects

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

A Physics-Aware Methodology for Equivalent Circuit Model Extraction of TSV-inductors

Electrical-Thermal Co-Simulation For Through Silicon Via And Active Tier In 3-D Ic

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Modeling Simplification for Thermal Mechanical Stress Analysis of TSV Interposer Stack

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Thermal Performance Analysis of Carbon Materials Based TSV in Three Dimensional Integrated Circuits

Modeling and Characterization of Joule Heating in Metal Core of Tsv

The thermal stress analysis in 3D IC integration with TSV interposer

Thermal analysis and heat dissipation optimization of 3D packaging with TSV interposer

The Development of Effective Model for Thermal Conduction Analysis for 2.5D Packaging Using TSV Interposer

An Accurate Calculation Method on Thermal Effectiveness of Tsv and Wire

Thermal-aware Cell and Through-Silicon-via Co-Placement for 3D ICs.

Multi-physics modeling of through-silicon vias with equivalent-circuit approach