Room Temperature Triggered Single Photon Emission from Self‐Assembled GaN/AlN Quantum Dot in Nanowire
Ling Chen,Bowen Sheng,Shanshan Sheng,Ping Wang,Xiaoxiao Sun,Duo Li,Tao Wang,Renchun Tao,Shangfeng Liu,Zhaoying Chen,Weikun Ge,Bo Shen,Xinqiang Wang
DOI: https://doi.org/10.1002/adfm.202208340
IF: 19
2022-09-16
Advanced Functional Materials
Abstract:Room temperature (RT) operation is crucial for practical applications of single photon emitters. RT triggered single photon emission from self‐assembled GaN/AlN quantum dot in nanowire grown on cost‐effective Si substrate by molecular beam epitaxy is demonstrated. It shows a second‐order correlation function g(2)(0) value of 0.35 ± 0.05 at RT, which is of great significance for its practical quantum information applications. Room temperature (RT) operation is one of the crucial requirements for the practical applications of single photon emitters. Here, RT triggered single photon emission from self‐assembled GaN quantum dots (QDs) embedded in AlN nanowires grown by molecular beam epitaxy on Si (111) substrate is demonstrated. Photoluminescence of GaN/AlN QDs show strong emission in the range of 3.6–4.1 eV at 4.7 K, with average full width at half maximum of ≈2.7 meV, the sharpest one reaches as narrow as 1.6 meV. The QD exhibits a fast‐radiative lifetime of ≈0.98 ns at 4.7 K due to strong quantum confinement. A clear antibunching effect is observable up to RT, with a second‐order correlation function at zero time delay g(2)(0) = 0.35 ± 0.05, confirming single photon emission at RT, manifesting strong potential for practical quantum information applications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology