Room-temperature Optically-Pumped GaSb Quantum Well Based VCSEL Monolithically Grown on Si (100) Substrate

G Balakrishnan,SH Huang,A Khoshakhlagh,A Jallipalli,P Rotella,A Amtout,S Krishna,CP Haines,LR Dawson,DL Huffaker

DOI: https://doi.org/10.1049/el:20064286

2006-01-01

Electronics Letters

Abstract:Monolithic vertical cavity surface emitting lasers (VCSELs) on Si are demonstrated. The GaSb multi-quantum well active region embedded in an AI(Ga)Sb half-wave cavity spacer layer enables lasing under room-temperature optically-pumped conditions. The 13% lattice mismatch is accommodated by a spontaneously formed 2-D array of 90 degrees misfit dislocations at the AlSb/Si interface. This growth mode produces very low defect density (similar to 8 x 10(5)/cm(2)) and relaxed materials growth (98%) without the use of a buffer layer. Presented are VCSEL lasing spectra, light-in against light-out curves along with defect density measurements performed by microscopy and etch-pit density. A threshold excitation density of I-th = 0(.)1 mJ/cm(2) and a multimode lasing spectrum peaked at 1.62 mu m, results from a 3 mm pump-spot size.