Abstract:We present a 1.54 mu m, 77 K, pulsed GaSb quantum well (QW) laser diode grown monolithically on a Si(100)-5 degrees substrate. The III-Sb device is grown on an AlSb nucleation layer on Si with the 13% mismatch accommodated by a self-assembled 2D array of pure 90 degrees dislocations. We demonstrate the simultaneous formation of this interfacial misfit dislocation (IMF) array along with antiphase domain suppression in the growth of AlSb on 5 degrees miscut Si (001) substrate. The lomer dislocation spacing in the IMF (similar to 3.46 nm) corresponds to the 13% mismatch between AlSb and Si and is also well matched to the step length of the 5 degrees miscut Si (001) substrate. The resulting bulk material has both very low defect density (similar to 7 x 10(5)/cm(2)) and very low APD density (similar to 10(3)/cm(2)) confirmed by transmission electron and atomic force microscope images. The GaSb QW based laser diodes are grown on this high quality AlSb layer and the resulting devices operate at 77 K under pulsed conditions (2 mu sec pulse-width and a 0.1% duty cycle) with an emission wavelength of 1.54 mu m and a threshold current density of 2 kA/cm(2) for a 100 mu m x 2mm device. The maximum peak power from the device is similar to 20 mWatts.

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