Abstract:The temperature-dependent phase noise properties of a monolithic two-section mode-locked semiconductor laser are first investigated. This is performed on a GaSb-based quantum well laser emitting at ∼2 <i>μ</i>m. Stable mode locking operation with a fundamental repetition frequency of ∼13.3 GHz is achieved on this laser up to 60 °C. At a fixed temperature, there is no monotonous dependence of integrated jitter on the bias condition. For a given gain current or absorber voltage, there exists a corresponding optimal absorber voltage or gain current, respectively, that minimizes the integrated jitter. More important, the phase noise properties improve obviously at elevated temperatures with the lowest achievable jitter reducing obviously from 3.15 ps at 20 °C to 1.39 ps at 60 °C (100 kHz–1 GHz). We consider that the reason is reduced amplified spontaneous emission noise at high temperatures. This is confirmed by the extracted peak-to-valley ratio of the involved laser modes. We believe that this study provides an important insight into the carrier behaviors and noise performance of mode-locked semiconductor lasers, which is meaningful to their applications especially at high temperatures.

Characteristic Temperature of a 2 Μm InGaSb/AlGaAsSb Mode-locked Quantum Well Laser

High Temperature Characteristics Of A 2 M Ingasb/Algaassb Passively Mode-Locked Quantum Well Laser

Modal Gain Characteristics of a 2 Μm InGaSb/AlGaAsSb Passively Mode-Locked Quantum Well Laser

Room temperature continuous wave operation of a heterojunction bipolar transistor laser

Temperature- and Current-dependent Repetition Frequency of a 2 Μm InGaSb/AlGaAsSb Mode-locked Quantum Well Laser

Investigation of Regime Switching from Mode Locking to Q-switching in a 2 Μm InGaSb/AlGaAsSb Quantum Well Laser

Investigation Of Regime Switching From Mode Locking To Q-Switching In A 2 Mu M Ingasb/Gaassb Quantum Well Laser

Temperature-dependent phase noise properties of a two-section GaSb-based mode-locked laser emitting at 2 μ m

Stable Mode-Locked Operation with High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser

GaAs/AlGaAs quantum cascade lasers

Quasi-continuous-wave operation of AlGaAs/GaAs quantum cascade lasers

Temperature- and Current-Dependent Spontaneous Emission Study on 2 Μm InGaSb/AlGaAsSb Quantum Well Lasers

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

Mode-locked operation characteristics of a monolithic integrated two-section InGaAs/GaAs double quantum wells laser with asymmetric waveguide

2.75-Μm Mid-Infrared GaSb-Based Quantum Well Lasers with Quinary Alloy Barrier

2.1 Μm InGaSb Quantum Well Lasers Exhibiting the Maximum Conversion Efficiency of 27.5% with Digitally Grown AlGaAsSb Barriers and Gradient Layers

Room-temperature Lasing at 1.82μm of GaInSb∕AlGaSb Quantum Wells Grown on GaAs Substrates Using an Interfacial Misfit Array

AlInGaAs/AlGaAs/GaAs strained quantum well lasers with high characteristic temperature

Fabrication of High-Power 2μm GaSb-based Laser

High Temperature Characteristics Of 1.55 Mu M Ingaas/Ingaasp Strain-Compensated Multiple Quantum Well Lasers

GaSb-based Type-I Quantum Well Cascade Diode Lasers Emitting at Nearly 2-Μm Wavelength with Digitally Grown AlGaAsSb Gradient Layers*