Abstract:The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of $\Gamma$ and $L$ quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of $\mathbf{k\cdot p}$ theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50 meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method.

Formation and Optical Characteristics of Type-II Strain-Relieved GaSb/GaAs Quantum Dots by Using an Interfacial Misfit Growth Mode

Formation and Optical Characteristics of Strain-Relieved and Densely Stacked GaSb∕GaAs Quantum Dots

III/V Ratio Based Selectivity Between Strained Stranski-Krastanov and Strain-Free GaSb Quantum Dots on GaAs

Optical Properties of Stranski-Krastanow and Strain-Free GaSb Quantum Dots on GaAs Substrates - Towards Sb-based Type-II Quantum Dot Emitters -

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

The Structural and Optical Properties of GaSb/InGaAs Type-Ii Quantum Dots Grown on InP (100) Substrate.

Photoluminescence Investigation of Type-Ii GaSb/GaAs Quantum Dots Grown by Liquid Phase Epitaxy

Controlled Optical Properties of GaSb/InGaAs Type-Ii Quantum Dots Grown on InP Substrate

An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots

Phonon Replicas of Type-Ii GaSb/GaAs Quantum Dot Structure Grown by Liquid Phase Epitaxy

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Optical properties of Ge/Si quantum dot superlattices

Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures

Optical Transitions in Type-Ii InAs∕GaAs Quantum Dots Covered by a GaAsSb Strain-Reducing Layer

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect

Optical Properties of InAs Quantum Dots Grown on Patterned Si with a Thin GaAs Buffer Layer

Coexistence of Type-I and Type-Ii Band Alignments in In0.46al0.54as/Ga0.46al0.54as Self-Assembled Quantum Dots

Structural, Optical and Intraband Absorption Properties of Vertically Aligned In0.32Ga0.68As/GaAs Quantum Dots Superlattices

QUANTUM DOT OPTO-ELECTRONIC DEVICES