Abstract:This thesis describes an extensive study of the optical properties of In(Ga)As/Ga(Al)As quantum dots, both singularly and in laser devices. For the optical characterisation, the spectroscopic techniques of photoluminescence (PL), photoluminescence-excitation (PLE) and electroluminescence (EL) have been used. Additionally, for studying submicron structures, sophisticated micro-PL techniques allowed excitation, and detection, of a single quantum dot. A variety of special growth and fabrication techniques were used to isolate a single quantum dot from the rest of the ensemble. Firstly, a submicron mesa that isolated a single quantum dot was fabricated using e-beam lithography and dry etching techniques. Excitation intensity and wavelength dependence of the emission provided information about the nature of the exciton complexes in the dot and the absorption and relaxation of carriers in the structure. The linewidth of the single exciton, and the variation with temperature, was measured. Secondly, samples consisting of a single layer of InGaAs quantum dots incorporated within the intrinsic region of a GaAs/AlGaAs Metal-Insulator-Semiconductor type Schottky structure allowed sequential dot charging via variation of the gate bias. Both n- and p- type samples, grown under similar conditions, were investigated. Single quantum dots were probed through submicron apertures opened in the top metal contact using electron beam lithography and dry etching. The emission undergoes several pronounced changes as additional carriers are sequentially loaded into the dot. The results reveal direct information regarding Coulomb interaction and correlation effects in dots containing a controlled number of excess electrons (up to four) or holes (up to two). Magneto- optical results reveal further information about the few-particle wave functions. A detailed study of the device performance and physical processes in In(Ga)As- Ga(Al)As self-assembled quantum dot lasers showed that these lasers offer several potential advantages over conventional quantum well lasers including low threshold current density, temperature insensitive threshold current density and high differential gain. Device performance (threshold current density and its variation with temperature) has been studied as a function of a number of parameters, including dot density, dot composition and dot confinement potential. The application of large (<14T) magnetic fields has been used to study carrier transport and dot carrier capture effects. When applied along the growth axis, such fields result in an increase in the threshold current density and a decrease in the external quantum efficiency. These effects are attributed to inhibited inplane carrier transport resulting in an increase in the carrier capture efficiency by non-lasing dots. Spontaneously emitted light, recorded via small windows formed in the top metallic contact, has been studied as a function of injection current and temperature. Analysis of this data provides information on non-radiative loss mechanisms and dot carrier dynamics.

III/V Ratio Based Selectivity Between Strained Stranski-Krastanov and Strain-Free GaSb Quantum Dots on GaAs

Formation and Optical Characteristics of Type-II Strain-Relieved GaSb/GaAs Quantum Dots by Using an Interfacial Misfit Growth Mode

Optical Properties of Stranski-Krastanow and Strain-Free GaSb Quantum Dots on GaAs Substrates - Towards Sb-based Type-II Quantum Dot Emitters -

Formation and Optical Characteristics of Strain-Relieved and Densely Stacked GaSb∕GaAs Quantum Dots

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Optical properties of Ge/Si quantum dot superlattices

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Photoluminescence Investigation of Type-Ii GaSb/GaAs Quantum Dots Grown by Liquid Phase Epitaxy

Optical Properties of InAs Quantum Dots Grown on Patterned Si with a Thin GaAs Buffer Layer

Large and uniform optical emission shifts in quantum dots externally strained along their growth axis

Strain-tuned Optoelectronic Properties of Hollow Gallium Sulphide Microspheres.

The Structural and Optical Properties of GaSb/InGaAs Type-Ii Quantum Dots Grown on InP (100) Substrate.

Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures

Controlled Optical Properties of GaSb/InGaAs Type-Ii Quantum Dots Grown on InP Substrate

1.3-Mu M Inas/Gaas Quantum Dots Grown On Si Substrates

Atomic-column Scanning Transmission Electron Microscopy Analysis of Misfit Dislocations in GaSb/GaAs Quantum Dots

Optical characterisation of III-V semiconductor quantum dots and quantum dot structures

Optical Studies of InAs Quantum Dots in III-V Semiconductors

Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces