Optical Properties of Stranski-Krastanow and Strain-Free GaSb Quantum Dots on GaAs Substrates - Towards Sb-based Type-II Quantum Dot Emitters -

Tatebayashi, J.,Balakrishnan, G.,Huang, S.H.,Khoshakhlagh, A.
DOI: https://doi.org/10.1109/nano.2006.247583
2006-01-01
Abstract:We report the optical characteristics of type II GaSb quantum dot (QD) formation on GaAs by either Stranski-Krastanow (SK) or interfacial misfit (IMF) growth mode. The growth mode selection can be controlled by the gallium to antimony (III/V) ratio where a high III/V ratio produces IMF and a low III/V ratio establishes the SK growth mode. The IMF growth mode produces strain-free QDs emitting at 1.35 μm at room-temperature (RT), while the SK growth mode produces highly-strained QDs emitting at 1.18 μm at RT. We also demonstrate the fabrication of light-emitting diode (LED) structures containing five layers of GaSb/GaAs QDs using the IMF growth mode. Electroluminescence (EL) peak at 1.3 μm from the stacked QDs is observed at RT, which would be applicable to GaAs-based photonic devices for fiber-optic communication systems.
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