Abstract:Wavelength tunable lasers are increasingly needed as key components for wavelength resource management technologies in future dense wavelength division multiplexing (DWDM) systems. While material systems with multiple quantum wells as an active region are widely used in long‐wavelength tunable lasers, the unique advantages of InAs/GaAs quantum dots (QDs) for low‐power operation, excellent thermal stability, and wide spectral bandwidth may open a new avenue in this field. Combining the advantages of QDs with a special designed half‐wave coupled cavity structure, directly modulated, single‐mode, tunable InAs/GaAs QD lasers are demonstrated at 1.3 µm wavelength range. The half‐wave coupler provides an active–active coupled‐cavity tunable structure without involving gratings or multiple epitaxial growths, producing synchronous power transfer in the two output waveguides and high single‐mode selectivity. 27‐channel wavelength switching is achieved with side‐mode‐suppression‐ratio of around 35 dB. Under continuous‐wave electrical injection, over 9 mW output power can be measured with 716 kHz Lorentzian linewidth, 4 GHz 3‐dB bandwidth, and 8 Gbit s−1 non‐return‐to‐zero signal modulation by directly probing the chip.

Room-Temperature Preperation of Ingaasn Quantum Dot Lasers Grown by Mocvd

Room Temperature Continuous-Wave Operation of Inas/Inp (100) Quantum Dot Lasers Grown by Gas-Source Molecular-Beam Epitaxy

Ingaasn Quantum Dots For Long Wavelength Lasers

Inas/Ingaasp/Inp Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition

Molecular Beam Epitaxial Growth Of Inas Quantum Dots On Gaas For High Characteristics Temperature Lasers

Deep-Ultraviolet Emission from an Ingaas Semiconductor Laser

Inas/Gaas Quantum-Dot Light Emitters Monolithically Grown On Si Substrates

Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.

GaAs/AlGaAs quantum cascade lasers

Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications

Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry–Perot and Distributed-Feedback Laser Diodes

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

Room-Temperature Electrically Injected AlGaN-Based Near-Ultraviolet Laser Grown on Si

Spontaneous Emission and Gain Characteristics of Ingaas/Ingaasp Quantum Well Laser

Comparison Of Photocurrent Spectra Of Ingaasn Qd And Ingaas Qw Laser Devices

Electrically Pumped Continuous‐wave 1.3‐µm InAs/GaAs Quantum Dot Lasers Monolithically Grown on Si Substrates

Room-temperature Lasing at 1.82μm of GaInSb∕AlGaSb Quantum Wells Grown on GaAs Substrates Using an Interfacial Misfit Array

Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature