Abstract:Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve efficient light emission from silicon in the extending the silicon technology into fully integrated optoelectronic circuits. Here, we report the realization of room-temperature stimulated emission in the technologically crucial 1.5 micron wavelength range from Er-doped GaN multiple-quantum wells on silicon and sapphire. Employing the well-acknowledged variable stripe technique, we have demonstrated an optical gain up to 170 cm-1 in the multiple-quantum well structures. The observation of the stimulated emission is accompanied by the characteristic threshold behavior of emission intensity as a function of pump fluence, spectral linewidth narrowing and excitation length. The demonstration of room-temperature lasing at the minimum loss window of optical fibers and in the eye-safe wavelength region of 1.5 micron are highly sought-after for use in many applications including defense, industrial processing, communication, medicine, spectroscopy and imaging. As the synthesis of Er-doped GaN epitaxial layers on silicon and sapphire has been successfully demonstrated, the results laid the foundation for achieving hybrid GaN-Si lasers providing a new pathway towards full photonic integration for silicon optoelectronics.

Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature

Continuous-wave, Room Temperature, Low Voltage Green–blue Diode Laser

Room temperature continuous wave operation of a heterojunction bipolar transistor laser

Room Temperature Continuous-Wave Operated 2.0-W GaN-based Ultraviolet Laser Diodes

Room-temperature Continuous-Wave Electrically Pumped InGaN/GaN Quantum Well Blue Laser Diode Directly Grown on Si

Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

Enhanced Temperature Characteristic of InGaN/GaN Laser Diodes with Uniform Multiple Quantum Wells

Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing

Performance Enhancement of the GaN-based Laser Diode by Using an Unintentionally Doped GaN Upper Waveguide

High Temperature Characteristics Of A 2 M Ingasb/Algaassb Passively Mode-Locked Quantum Well Laser

Quasi-continuous-wave operation of AlGaAs/GaAs quantum cascade lasers

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

Continuous-wave Electrically Injected GaN-on-Si Microdisk Laser Diodes

GaN-Based Blue Laser Diodes with 2.2 W of Light Output Power under Continuous-Wave Operation

High-Duty-Cycle Operation of GaAs/AlGaAs Quantum Cascade Laser above Liquid Nitrogen Temperature

Room Temperature Continuous Wave Lasing of GaN-based Green Vertical-Cavity Surface-Emitting Lasers

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

Room-temperature lasing action in GaN quantum wells in the infrared 1.5 micron region

Room Temperature Continuous Wave Operation of GaSb - Based Semiconductor Disk Laser Near 2 Μm

Abstracts of MRS Internet Journal of Nitride Semiconductor Research, Volume 4, Articies 1–16

Characteristics and Structural Optimization of Multi-Quantum-Well Structure of GaN-Based Laser Diode