Abstract:The effects of GaN/InGaN asymmetric lower waveguide(LWG)layers on photoelectrical properties of InGaN mul-tiple quantum well laser diodes(LDs)with an emission wavelength of around 416 nm are theoretically investigated by tuning the thickness and the indium content of InGaN insertion layer(InGaN-IL)between the GaN lower waveguide layer and the quantum wells,which is achieved with the Crosslight Device Simulation Software(PIC3D,Crosslight Software Inc.).The optimal thickness and the indium content of the InGaN-IL in lower waveguide layers are found to be 300 nm and 4％,respectively.The thickness of InGaN-IL predominantly affects the output power and the optical field distribution in comparison with the indium content,and the highest output power is achieved to be 1.25 times that of the reference structure(symmetric GaN waveguide),which is attributed to the reduced optical absorption loss as well as the concentrated optical field nearby quantum wells.Furthermore,when the thickness and indium content of InGaN-IL both reach a higher level,the performance of asymmetric quantum wells LDs will be weakened rapidly due to the obvious decrease of optical confinement factor(OCF)related to the concentrated optical field in the lower waveguide.

Enhanced Temperature Characteristic of InGaN/GaN Laser Diodes with Uniform Multiple Quantum Wells

Green Laser Diodes with Constant Temperature Growth of InGaN/GaN Multiple Quantum Well Active Region

Asymmetrical Quantum Well Degradation of InGaN/GaN Blue Laser Diodes Characterized by Photoluminescence

Improving temperature characteristics of GaN-based ultraviolet laser diodes by using InGaN/AlGaN quantum wells

Study of temperature-dependent electroluminescence in the high-power blue InGaN/GaN multiple quantum wells light-emitting diodes

Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature

Room Temperature Continuous-Wave Operated 2.0-W GaN-based Ultraviolet Laser Diodes

Suppression Of Thermal Degradation Of Ingan/Gan Quantum Wells In Green Laser Diode Structures During The Epitaxial Growth

Performance Enhancement of GaN-Based Laser Diodes with Prestrained Growth

Optical Characterization of InGaN/GaN Quantum Well Active Region of Green Laser Diodes

Strain-Related Degradation of GaN-Based Blue Laser Diodes

Investigation of InGaN/GaN Laser Degradation Based on Luminescence Properties

Realization of InGaN Laser Diodes above 500 Nm by Growth Optimization of the InGaN/GaN Active Region

Performance Enhancement of the GaN-based Laser Diode by Using an Unintentionally Doped GaN Upper Waveguide

Comparison of Temperature Dependent Electroluminescence of InGaN/GaN and AlGaInP Based LEDs

Enhancing Performance of GaN-based LDs by Using GaN/InGaN Asymmetric Lower Waveguide Layers

High Temperature Characteristics Of A 2 M Ingasb/Algaassb Passively Mode-Locked Quantum Well Laser

GaN-Based Blue Laser Diodes with 2.2 W of Light Output Power under Continuous-Wave Operation

Characteristics of InGaN multiple quantum well blue-violet laser diodes

Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures

Green Laser Diodes with Low Threshold Current Density Via Interface Engineering of InGaN/GaN Quantum Well Active Region.