Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

Enhancing Performance of GaN-based LDs by Using GaN/InGaN Asymmetric Lower Waveguide Layers

Performance Enhancement of GaN-Based Laser Diodes with Prestrained Growth

Performance Enhancement of the GaN-based Laser Diode by Using an Unintentionally Doped GaN Upper Waveguide

Improving Output Power Of Ingan Laser Diode Using Asymmetric In0.15ga0.85n/In0.02ga0.98n Multiple Quantum Wells

Design Considerations for GaN-Based Blue Laser Diodes with InGaN Upper Waveguide Layer

Effects of TMIn Flow Rate During Quantum Barrier Growth on Multi-quantum Well Material Properties and Device Performance in GaN-Based Laser Diodes

Improving optical and electrical properties of InGaN-based green laser diodes by graded-compositional waveguide structure

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Optimized Layers Design for AlGaN/GaN/InGaN Symmetrical Separate Confinement Heterojunction Multi-Quantum Well Laser Diode

Enhanced carrier confinement and radiative recombination in GaN-based lasers by tailoring first-barrier doping.

The Critical Impact of the Waveguide Thickness on the Optical and Threshold Behaviors of InGaN-based Green Laser Diodes

Improvement of Characteristics of InGaN-based Laser Diodes with Undoped InGaN Upper Waveguide Layer

Confinement Factor and Absorption Loss of AlInGaN Based Laser Diodes Emitting from Ultraviolet to Green

Realization of InGaN Laser Diodes above 500 Nm by Growth Optimization of the InGaN/GaN Active Region

Performance Improvement of InGaN-based Laser Grown on Si by Suppressing Point Defects.

376 nm High-Power UV-A Laser Diodes With GaN Waveguide

Optical-mode study of galium nitrate based laser diodes

Utilization of Polarization-Inverted Alingan or Relatively Thinner Algan Electron Blocking Layer in Ingan-Based Blue-Violet Laser Diodes

Down-scaling of GaN-based Laser Diodes for High-Speed Modulation Characteristics

High Efficient GaN-based Laser Diodes with Tunnel Junction