Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

Utilization of Polarization-Inverted Alingan or Relatively Thinner Algan Electron Blocking Layer in Ingan-Based Blue-Violet Laser Diodes

Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes.

Advantage Of Tapered And Graded Algan Electron Blocking Layer In Ingan-Based Blue Laser Diodes

Design Considerations for GaN-Based Blue Laser Diodes with InGaN Upper Waveguide Layer

The Effectiveness of Electron Blocking Layer in InGaN‐based Laser Diodes with Different Indium Content

Improvement of Hole Injection and Electron Overflow by a Tapered AlGaN Electron Blocking Layer in InGaN-based Blue Laser Diodes

Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer.

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Confinement Factor and Absorption Loss of AlInGaN Based Laser Diodes Emitting from Ultraviolet to Green

AlGaN-Based Deep UV Laser Diodes without an Electron Blocking Layer and with a Reduced Aluminum Composition of Quantum Barriers

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Achieving High-Performance Blue GaN-Based Light-Emitting Diodes by Energy Band Modification on Al x In y Ga 1– x – y N Electron Blocking Layer

Doped Effects of Quaternary AlInGaN Last Quantum Barrier for Deep-Ultraviolet Laser Diodes Without Electron Blocking Layer

Demonstrating the Electron Blocking Effect of AlGaN/GaN Superlattice Cladding Layers in GaN-based Laser Diodes

Enhancing Performance of GaN-based LDs by Using GaN/InGaN Asymmetric Lower Waveguide Layers

Compositional Degradation of the Electron Blocking Layers Through Solid-Solution in GaN-based Laser Diodes

Optimization of p-cladding layer utilizing polarization doping for Blue-Violet InGaN laser diodes

The Effect of Composite GaN/InGaN Last Barrier Layer on Electron Leakage Current and Modal Gain of InGaN‐based Multiple Quantum Well Laser Diodes

Structure Design of InGaN-based Blue Laser Diodes with ITO and Nanoporous GaN Cladding Layers

Research on AlInGaN quaternary alloys as MQW barriers in GaN-based laser diodes

Polarization-engineered AlGaN Last Quantum Barrier for Efficient Deep-Ultraviolet Light-Emitting Diodes