Abstract:Electron leakage currents seriously limit the power conversion efficiencies (PCEs) of gallium nitride (GaN)-based laser diodes (LDs). To minimize the leakage currents, electron blocking layers are generally applied in the p-type region. However, few works have discussed the electron blocking effect of a p-cladding layer, which is found to be critical in suppressing the leakage currents of an LD. In this work, we compare the blocking performance of uniform AlGaN p-cladding layers and AlGaN/GaN superlattice (SL) p-cladding layers with the same average Al component respectively. Both light-emitting diodes (LEDs) and LDs with the same epitaxy structures are characterized by light-current (L-I) and current-voltage (I-V) measurements. The latest analytical model of leakage currents is applied to fit the L-I curves of LEDs, where smaller leakage coefficients are observed in the SL structures compared with the uniform-layer structures. Eighty LDs with varying ridge widths are studied by comparing the threshold current densities, slope efficiencies, and PCEs. The SL-based p-cladding layer shows statistically significant advantages over a uniform AlGaN layer. The blocking effects of both scattering- and bound-state electrons in SLs are investigated theoretically. Repetitive reflection and thermal relaxation are responsible for the blocking effect of scattering-state electrons. Simulation results indicate that the tunneling effect of bound-state electrons through a miniband mechanism is insignificant at a large injection level due to a negative differential conductivity by the Esaki-Tsu effect. We demonstrate a better electron blocking performance of p-cladding layers based on SLs than uniform AlGaN layers in GaN-based LDs.

The Effectiveness of Electron Blocking Layer in InGaN‐based Laser Diodes with Different Indium Content

Utilization of Polarization-Inverted Alingan or Relatively Thinner Algan Electron Blocking Layer in Ingan-Based Blue-Violet Laser Diodes

Demonstrating the Electron Blocking Effect of AlGaN/GaN Superlattice Cladding Layers in GaN-based Laser Diodes

The Effect of Composite GaN/InGaN Last Barrier Layer on Electron Leakage Current and Modal Gain of InGaN‐based Multiple Quantum Well Laser Diodes

Advantage Of Tapered And Graded Algan Electron Blocking Layer In Ingan-Based Blue Laser Diodes

Improvement of Hole Injection and Electron Overflow by a Tapered AlGaN Electron Blocking Layer in InGaN-based Blue Laser Diodes

Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes.

AlGaN-Based Deep UV Laser Diodes without an Electron Blocking Layer and with a Reduced Aluminum Composition of Quantum Barriers

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

Compositional Degradation of the Electron Blocking Layers Through Solid-Solution in GaN-based Laser Diodes

Design Considerations for GaN-Based Blue Laser Diodes with InGaN Upper Waveguide Layer

Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer.

Research on AlInGaN quaternary alloys as MQW barriers in GaN-based laser diodes

Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes

Effects of TMIn Flow Rate During Quantum Barrier Growth on Multi-quantum Well Material Properties and Device Performance in GaN-Based Laser Diodes

Confinement Factor and Absorption Loss of AlInGaN Based Laser Diodes Emitting from Ultraviolet to Green

Effects of P-Algan Ebl Thickness on the Performance of Ingan Green Leds with Large V-Pits

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Donor-Related Cathodoluminescence Of P-Algan Electron Blocking Layer Embedded In Ultraviolet Laser Diode Structure

Doped Effects of Quaternary AlInGaN Last Quantum Barrier for Deep-Ultraviolet Laser Diodes Without Electron Blocking Layer

Enhancing Performance of GaN-based LDs by Using GaN/InGaN Asymmetric Lower Waveguide Layers