Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

Asymmetrical Quantum Well Degradation of InGaN/GaN Blue Laser Diodes Characterized by Photoluminescence

Identification of degradation mechanisms of blue InGaN/GaN laser diodes

Atomic-level Quantum Well Degradation of GaN-based Laser Diodes Investigated by Atom Probe Tomography

Investigation of InGaN/GaN Laser Degradation Based on Luminescence Properties

Strain-Related Degradation of GaN-Based Blue Laser Diodes

Enhanced Temperature Characteristic of InGaN/GaN Laser Diodes with Uniform Multiple Quantum Wells

Suppression Of Thermal Degradation Of Ingan/Gan Quantum Wells In Green Laser Diode Structures During The Epitaxial Growth

Catastrophic Degradation of Ingan/Gan Blue Laser Diodes

Investigation of Rapid Degradation in GaN-based Blue Laser Diodes

Green Laser Diodes with Constant Temperature Growth of InGaN/GaN Multiple Quantum Well Active Region

Research on Degradation Characteristics of GaN-based LD

Startified thermal degradation in blue InGaN quantum well structures: P-GaN growth temperature and its influence on quantum well optical properties

Rapid Degradation of InGaN/GaN Green Laser Diodes

Degradation mechanism beyond device self-heating in high power light-emitting diodes

Optical Characterization of InGaN/GaN Quantum Well Active Region of Green Laser Diodes

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Identification of Degradation Mechanisms Based on Thermal Characteristics of InGaN/GaN Laser Diodes

Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

Degradation Study of InGaN-based Laser Diodes Grown on Si

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Time-resolved and Temperature-Varied Photoluminescence Studies of InGaN/GaN Multiple Quantum Well Structures