Abstract:Electron leakage currents seriously hinder GaN-based blue laser diodes (LDs) from high wall-plug efficiencies. Inserting an ultra-thin AlGaN electron blocking layer (EBL) in the epitaxy structure is a major technique to suppress the leakage currents for which a high Al composition in the EBL is necessary. Despite many studies on the optimization of the compositions of EBLs, it is questionable whether they reach the designed value in real growths by metal-organic vapor phase epitaxy. We investigate the influence of the growth conditions of upper cladding layers (CLs) on the underlying EBLs. A strong composition degradation of the EBL is observed when the growth rate of the CL is low, which drastically reduces the output performance of both LEDs and LDs. A 30-nm fast-growing protecting layer can efficiently prevent the EBL from such degradation. The phenomenon cannot be explained by a composition pulling effect nor an etch effect by hydrogen, but by a mutual solid solution between the EBL and the adjacent CL. The solution process is found thermally favored by calculating the Gibbs energy where strain and entropies are considered. It is inferred that the chemically active Ga adatoms at the surface play an important role in accelerating the solution process. Based on these considerations, we introduce a random walk model to clarify the kinetic influence of CL growth rates on EBL degradation semi-quantitatively. The results help to understand the subtle process in the growth of heterostructures and the transport process of GaN-based LDs.

Identification of degradation mechanisms of blue InGaN/GaN laser diodes

Identification of Degradation Mechanisms Based on Thermal Characteristics of InGaN/GaN Laser Diodes

Investigation of InGaN/GaN Laser Degradation Based on Luminescence Properties

Investigation of Rapid Degradation in GaN-based Blue Laser Diodes

Strain-Related Degradation of GaN-Based Blue Laser Diodes

Asymmetrical Quantum Well Degradation of InGaN/GaN Blue Laser Diodes Characterized by Photoluminescence

Catastrophic Degradation of Ingan/Gan Blue Laser Diodes

Rapid Degradation of InGaN/GaN Green Laser Diodes

Research on Degradation Characteristics of GaN-based LD

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Degradation Study of InGaN-based Laser Diodes Grown on Si

Structural Defects and Degradation Phenomena in High-Power Pure-Blue InGaN-Based Laser Diodes Analysis of Aged Devices Using Fluorescence Microscopy is Used to Assess the Role That Point Defects Play in Generating Optical Damage and Additional Defects.

Structural Defects and Degradation Phenomena in High-Power Pure-Blue InGaN-Based Laser Diodes.

Degradation mechanism beyond device self-heating in high power light-emitting diodes

Degradation Behaviors of High Power Gan-Based Blue Light Emitting Diodes

Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

Compositional Degradation of the Electron Blocking Layers Through Solid-Solution in GaN-based Laser Diodes

Investigation on the mechanism of carrier recombination in the GaN-based blue laser diode before lasing

Enhanced Temperature Characteristic of InGaN/GaN Laser Diodes with Uniform Multiple Quantum Wells

Suppression Of Thermal Degradation Of Ingan/Gan Quantum Wells In Green Laser Diode Structures During The Epitaxial Growth

Investigation of Output Nonlinearity Mechanisms in Gan-Based Blue Laser Diodes