Abstract:Current laser-based display and lighting applications are invariably using blue laser diodes (LDs) grown on free-standing GaN substrates, which are costly and smaller in size compared with other substrate materials.1–3 Utilizing less expensive and large-diameter Si substrates for hetero-epitaxial growth of indium gallium nitride/gallium nitride (InGaN/GaN) multiple quantum well (MQW) structure can substantially reduce the cost of blue LDs and boost their applications. To obtain a high crystalline quality crack-free GaN thin film on Si for the subsequent growth of a blue laser structure, a hand-shaking structure was formed by inserting Al-composition step down-graded AlN/AlxGa1−xN buffer layers between GaN and Si substrate. Thermal degradation in InGaN/GaN blue MQWs was successfully suppressed with indium-rich clusters eliminated by introducing hydrogen during the growth of GaN quantum barriers (QBs) and lowering the growth temperature for the p-type AlGaN/GaN superlattice optical cladding layer. A continuous-wave (CW) electrically pumped InGaN/GaN quantum well (QW) blue (450 nm) LD grown on Si was successfully demonstrated at room temperature (RT) with a threshold current density of 7.8 kA/cm2.

Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

Continuous-wave, Room Temperature, Low Voltage Green–blue Diode Laser

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

GaN-Based Blue Laser Diodes with 2.2 W of Light Output Power under Continuous-Wave Operation

Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature

Room Temperature Continuous-Wave Operated 2.0-W GaN-based Ultraviolet Laser Diodes

Room-temperature Continuous-Wave Electrically Pumped InGaN/GaN Quantum Well Blue Laser Diode Directly Grown on Si

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

Identification of degradation mechanisms of blue InGaN/GaN laser diodes

Asymmetrical Quantum Well Degradation of InGaN/GaN Blue Laser Diodes Characterized by Photoluminescence

Strain-Related Degradation of GaN-Based Blue Laser Diodes

Characteristics of InGaN multiple quantum well blue-violet laser diodes

Enhanced Temperature Characteristic of InGaN/GaN Laser Diodes with Uniform Multiple Quantum Wells

Investigation of Rapid Degradation in GaN-based Blue Laser Diodes

Green Laser Diodes with Constant Temperature Growth of InGaN/GaN Multiple Quantum Well Active Region

Design and Growth of GaN-based Blue and Green Laser Diodes

Realization of InGaN Laser Diodes above 500 Nm by Growth Optimization of the InGaN/GaN Active Region

Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing

Deep-Ultraviolet Emission from an Ingaas Semiconductor Laser

Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes.

Design Considerations for GaN-Based Blue Laser Diodes with InGaN Upper Waveguide Layer