Abstract:Confinement factor and absorption loss of AlInGaN based multiquantum well laser diodes (LDs) were investigated by numerical simulation based on a two-dimensional waveguide model. The simulation results indicate that an increased ridge height of the waveguide structure can enhance the lateral optical confinement and reduce the threshold current. For 405 nm violet LDs, the effects of p-AlGaN cladding layer composition and thickness on confinement factor and absorption loss were analyzed. The experimental results are in good agreement with the simulation analysis. Compared to violet LD, the confinement factors of 450 nm blue LD and 530 nm green LD were much lower. Using InGaN as waveguide layers that has higher refractive index than GaN will effectively enhance the optical confinement for blue and green LDs. The LDs based on nonpolar substrate allow for thick well layers and will increase the confinement factor several times. Furthermore, the confinement factor is less sensitive to alloys composition of waveguide and cladding layers, being an advantage especially important for ultraviolet and green LDs.

Improving temperature characteristics of GaN-based ultraviolet laser diodes by using InGaN/AlGaN quantum wells

Enhanced Temperature Characteristic of InGaN/GaN Laser Diodes with Uniform Multiple Quantum Wells

Room Temperature Continuous-Wave Operated 2.0-W GaN-based Ultraviolet Laser Diodes

Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing

Improvement of Characteristics of InGaN-based Laser Diodes with Undoped InGaN Upper Waveguide Layer

Performance Enhancement of the GaN-based Laser Diode by Using an Unintentionally Doped GaN Upper Waveguide

Realization of InGaN Laser Diodes above 500 Nm by Growth Optimization of the InGaN/GaN Active Region

Performance Improvement of InGaN-based Laser Grown on Si by Suppressing Point Defects.

Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics

Thermal Characterization of GaN-based Laser Diodes by Forward-Voltage Method

A design and comparative investigation of graded AlxGa1 − x N QB for W-Al0.58GaN/W-Al0.64–0.58 GaN DUV laser diode on AlN substrate

Performance Enhancement of GaN-Based Laser Diodes with Prestrained Growth

Thermal behavior of AlGaN-based deep-UV LEDs

Green Laser Diodes with Constant Temperature Growth of InGaN/GaN Multiple Quantum Well Active Region

Research on AlInGaN quaternary alloys as MQW barriers in GaN-based laser diodes

Abstracts of MRS Internet Journal of Nitride Semiconductor Research, Volume 4, Articies 1–16

Confinement Factor and Absorption Loss of AlInGaN Based Laser Diodes Emitting from Ultraviolet to Green

Characteristics of InGaN multiple quantum well blue-violet laser diodes

AlGaN-based Thin-Film Ultraviolet Laser Diodes and Light-Emitting Diodes

Effect of temperature on GaN-integrated optical transceiver chips

The influence of material quality of lower InGaN waveguide layer on the performance of GaN-based laser diodes