Fabrication of AlGaN‐based ultraviolet‐B laser diodes using a substrate exfoliation method with water
Toma Nishibayashi,Ryosuke Kondo,Eri Matsubara,Ryoya Yamada,Rintaro Miyake,Yusuke Sasaki,Yoshinori Imoto,Sho Iwayama,Tetsuya Takeuchi,Satoshi Kamiyama,Hideto Miyake,Motoaki Iwaya
DOI: https://doi.org/10.1002/pssr.202300460
2024-02-18
physica status solidi (RRL) - Rapid Research Letters
Abstract:Vertical AlGaN‐based ultraviolet‐B laser diodes were fabricated by exfoliating sapphire substrates using a substrate exfoliation method with water. Wafers with the device structure on a sapphire substrate were cut into 1.1‐cm2 squares for further processing. An interlayer dielectric film composed of Al2O3 was applied to the wafer, followed by the addition of a Ni/Pt/Au p‐type electrode. The wafer was then supported by an AlN polycrystalline sintered substrate using AuSn solder, and the sapphire substrate was exfoliated through the use of water. Following exfoliation, the devices underwent several steps, including chemical‐mechanical polishing, device separation using a Cl2 inductively coupled plasma etching method, application of SiO2 insulating film, and the formation of Ti/Pt/Au/Ti/Au n‐ and pad‐electrodes. Finally, mirrors were formed through cleavage. The performance of the devices was assessed by injecting pulsed current into them at room temperature. The results show a shift from spontaneous emission spectrum to a very sharp multimode laser oscillation spectrum with a wavelength of approximately 304 nm by increasing the injection current, a clear threshold current at approximately 600 mA, strong transverse field polarization characteristics, and a spot‐like far‐field pattern characteristic of lasers. These results confirm that the vertical laser diode is operating properly. This article is protected by copyright. All rights reserved.
physics, condensed matter, applied,materials science, multidisciplinary