Low-threshold-current (~85 mA) of AlGaN-based UV-B laser diode with refractive-index waveguide structure

Shunya Tanaka,Yuya Ogino,Kazuki Yamada,Reo Ogura,Shohei Teramura,Moe Shimokawa,Sayaka Ishizuka,Sho Iwayama,Kosuke Sato,Hideto Miyake,Motoaki Iwaya,Tetsuya Takeuchi,Satoshi Kamiyama
DOI: https://doi.org/10.35848/1882-0786/ac200b
IF: 2.819
2021-09-01
Applied Physics Express
Abstract:We report on a refractive-index waveguide AlGaN-based ultraviolet-B band (UV-B) laser diode grown ona sapphire substrate, which achieves a laser oscillation at a low threshold current ( I th ),∼85 mA. The refractive index waveguide structure in a ridge-type structure is fabricated by a uniquemethod combining dry inductively coupled plasma reactive ion etching and wet etching withtetramethylammonium hydroxide solution. Using this structure, the longitudinal-mode transverseoptical confinement is successfully achieved, in which the ridge width is3 μ m, demonstrating a lowI th of UV-B laser diode.
physics, applied
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